Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS86242, MOSFET

August 2010

FDS86242 Rev. C

www.fairchildsemi.com

FDS86242 N-Channel PowerTrench

MOSFET

FDS86242

N-Channel PowerTrench

MOSFET

150 V, 4.1 A, 67 mΩ

Features

 Max r

DS(on)

= 67 mΩ at V

= 10 V, I

= 4.1 A

 Max r

DS(on)

= 98 mΩ at V

= 6 V, I

= 3.3 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for r

DS(on)

, switching performance and

ruggedness

Applications

 DC/DC converters and Off-Line UPS

 Distributed Power Architectures and VRMs

 Primary Switch for 24V and 48V Systems

 High Voltage Synchronous Rectifier

SO-8

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 4.1

-Pulsed 20

Single Pulse Avalanche Energy (Note 3) 40 mJ

Power Dissipation T

= 25 °C (Note 1) 5.0

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS86242 FDS86242 SO-8 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.1 A, 67 mΩ Features General Description Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance trench technology for extremely low rDS(on) ruggedness.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperatur Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 150 V 104 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Sourc
PAGE 3
20 5 ID, DRAIN CURRENT (A) VGS = 7 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 VGS = 5.5 V 5 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V 4 VGS = 6 V 3 2 VGS = 7 V 1 0 5 0 5 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 300 ID = 4.1 A VGS = 10 V 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 250 ID = 4.
PAGE 4
1000 ID = 4.1 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 50 V 6 VDD = 100 V 4 100 Coss Crss 10 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 8 1 0.1 10 1 Figure 7. Gate Charge Characteristics 5 20 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 4 3 VGS = 10 V 2 VGS = 6 V 1 o RθJA = 50 C/W 1 0.001 0.01 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDS86242 Rev. C 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.