Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS86540, MOSFET

May 2012

FDS86540 Rev. C

www.fairchildsemi.com

FDS86540 N-Channel PowerTrench

MOSFET

FDS86540

N-Channel PowerTrench

MOSFET

60 V, 18 A, 4.5 mΩ

Features

 Max r

DS(on)

= 4.5 mΩ at V

= 10 V, I

= 18 A

 Max r

DS(on)

= 5.4 mΩ at V

= 8 V, I

= 16.5 A

 High performance trench technologh for extremely low r

DS(on)

 High power and current handing capability in a widely used

surface mount package

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers.It has been optimized

for low gate charge, low r

DS(on)

, fast switching speed and body

diode reverse recovery performance

Applications

 Primary Switch in isolated DC-DC

 Synchronous Rectifier

 Load Switch

SO-8

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 18

-Pulsed 120

Single Pulse Avalanche Energy (Note 3) 194 mJ

Power Dissipation T

= 25 °C (Note 1) 5.0

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS86540 FDS86540 SO-8 13’’ 12

mm 2500 units

Summary of content (6 pages)

PAGE 1
FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ Features General Description Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A improve the overall efficiency and to minimize switch node High performance trench technologh for extremely low rDS(on) ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 60 V 28 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
8 VGS = 10 V VGS = 6 V VGS = 8 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 90 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 VGS = 5.5 V 30 VGS = 5 V 0 0 1 2 3 4 5 6 VGS = 5.5 V 4 VGS = 6 V 2 VGS = 8 V VGS = 10 V 0 0 30 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics ID = 18 A VGS = 10 V rDS(on), DRAIN TO 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.
PAGE 4
Ciss VDD = 20 V ID = 18 A 8 VDD = 30 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10000 10 6 VDD = 40 V 4 1000 Coss 100 2 Crss f = 1 MHz VGS = 0 V 0 0 10 20 30 40 50 60 10 0.1 70 1 10 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJA = 50 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.01 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C 5 www.fairchildsemi.
PAGE 6
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.