Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS8672S, MOSFET

December 2007

FDS8672S Rev.D2

www.fairchildsemi.com

FDS8672S N-Channel PowerTrench

SyncFET

™

FDS8672S

N-Channel PowerTrench

SyncFET

™

30V, 18A, 4.8mΩ

Features

 Max r

DS(on)

= 4.8mΩ at V

= 10V, I

= 18A

 Max r

DS(on)

= 7.0mΩ at V

= 4.5V, I

= 15A

 Includes SyncFET Schottky body diode

 High performance trench technology for extremely low r

DS(on)

and fast switching

 High power and current handling capability

 100% R

(Gate Resistance) tested

 Termination is Lead-free and RoHS Compliant

General Description

The FDS8672S is designed to replace a single MOSFET and

Schottky diode in synchronous DC/DC power supplies. This 30V

MOSFET is designed to maximize power conversion efficiency,

providing a low r

DS(on)

and low gate charge. The FDS8672S

includes a patented combination of a MOSFET monolithically

integrated with a Schottky diode using Fairchild’s monolithic

SyncFET technology.

Application

 Synchronous Rectifier for DC/DC Converters

 Notebook Vcore low side switch

 Point of load low side switch

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 18

-Pulsed 80

Single Pulse Avalanche Energy (Note 3) 216 mJ

Power Dissipation T

= 25°C (Note 1a) 2.5

Power Dissipation T

= 25°C (Note 1b) 1.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS8672S FDS8672S SO8 13’’ 12mm 2500 units

SO-8

Pin 1

Summary of content (7 pages)

PAGE 1
FDS8672S ® N-Channel PowerTrench SyncFET tm ™ 30V, 18A, 4.8mΩ Features General Description Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 500 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.
PAGE 3
4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID, DRAIN CURRENT (A) VGS = 3.5V 60 VGS = 10V VGS = 4.5V 40 VGS = 4V VGS = 3V 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 3V 3.0 2.5 VGS = 3.5V VGS = 4V 2.0 1.5 VGS = 4.5V 1.0 VGS = 10V 0.5 3 0 20 40 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 15 ID = 18A rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.
PAGE 4
5000 ID = 18A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V VDD = 15V 6 VDD = 20V 4 Crss 2 100 5 10 15 20 25 f = 1MHz VGS = 0V 60 0.1 0 0 Coss 1000 30 1 Figure 7. Gate Charge Characteristics 20 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs Drain to Source Voltage 30 10 TJ = 25oC TJ = 125oC 15 VGS = 10V 10 VGS = 4.5V 5 o RθJA = 50 C/W 1 0.01 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.0001 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 5 www.fairchildsemi.
PAGE 6
SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high parallel with PowerTrench MoSFET. This diode exhibits similar temperature and high reverse voltage. This will increase the characteristics to a discrete external Schottky diode in parallel power in the device. with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDS8672S. CURRENT: 0.
PAGE 7
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