Datasheet

January 2006
FDS8690 N-Channel PowerTrench
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDS8690 Rev. B
www.fairchildsemi.com1
FDS8690
N-Channel PowerTrench
®
MOSFET
30V, 14A, 7.6mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Applications
 Notebook CPU power supply
 Synchronous rectifier
Features
 Max r
DS(on)
= 7.6mΩ, V
GS
= 10V, I
D
= 14A
 Max r
DS(on)
= 11.4mΩ, V
GS
= 4.5V, I
D
= 11.5A
 High performance trench technology for extremely low
r
DS(on)
and fast switching
 Very low gate charge
 High power and current handling capability
 100% R
G
tested
 RoHS Compliant
Absolute Maximum Ratings T
A
= 25°C unless otherwise Noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 14
A
-Pulsed 100
E
AS
Single Pulse Avalanche Energy (Note 3) 210 mJ
P
D
Power Dissipation for Single Operation (Note 1a) 2.5
W (Note 1b) 1.2
(Note 1c) 1.0
T
J
, T
STG
Operating and Storage Temperature -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W
R
θJC
Thermal Resistance, Junction to Case (Note 1) 25 °C/W
Device Marking Device Reel Size Tape Width Quantity
FDS8690 FDS8690 13” 12mm 2500 units
L
E
A
D
F
R
E
E
M
T
A
E
L
N
T
I
O
M
P
E
N
I