Datasheet
May 2013
FDS8813NZ N-Channel PowerTrench
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C2
www.fairchildsemi.com
1
FDS8813NZ
N-Channel PowerTrench
®
MOSFET
30V, 18.5A, 4.5mΩ
Features
Max r
DS(on)
= 4.5mΩ at V
GS
= 10V, I
D
= 18.5A
Max r
DS(on)
= 6.0mΩ at V
GS
= 4.5V, I
D
=16A
HBM ESD protection level of 5.6KV typical (note 3)
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 18.5
A
-Pulsed 74
E
AS
Single Pulse Avalanche Energy (Note 4) 337 mJ
P
D
Power Dissipation (Note 1a) 2.5
W
Power Dissipation (Note 1b) 1.0
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 25
°C/WR
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 125
Device Marking Device Reel Size Tape Width Quantity
FDS8813NZ FDS8813NZ 13” 12mm 2500 units
Pin 1
SO-8
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S