Datasheet
April 2009
©2009 Fairchild Semiconductor Corporation
FDS8840NZ Rev.C1
www.fairchildsemi.com
1
FDS8840NZ N-Channel Power Trench
®
MOSFET
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
FDS8840NZ
N-Channel PowerTrench
®
MOSFET
40 V, 18.6 A, 4.5 mΩ
Features
Max r
DS(on)
= 4.5 mΩ at V
GS
= 10 V, I
D
= 18.6 A
Max r
DS(on)
= 6.0 mΩ at V
GS
= 4.5 V, I
D
= 14.9 A
HBM ESD protection level of 6 kV typical(note 3)
High performance trench technology for extremely low r
DS(on)
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
General Description
The FDS8840NZ has been designed to minimize losses in
power conversion application. Advancements in both
silicon
and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Applications
Synchronous Buck for Vcore and Server
Notebook Battery Pack
Load Switch
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous 18.6
A
-Pulsed 63
E
AS
Single Pulse Avalanche Energy (Note 4) 600 mJ
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
W
Power Dissipation T
A
= 25 °C (Note 1b) 1.0
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 25
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDS8840NZ FDS8840NZ SO8 13 ’’ 12 mm 2500 units