FDS8878 N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ Features General Description rDS(on) = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. rDS(on) = 17mΩ, VGS = 4.5V, ID = 9.
Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) 10.2 A Continuous (TA = 25 C, VGS = 4.5V, RθJA = 50 C/W) 9.3 A Pulsed 80 A Single Pulse Avalanche Energy (Note 1) 57 mJ Power dissipation 2.
tON Turn-On Time - - 54 ns td(ON) Turn-On Delay Time - 7 - ns tr Rise Time - 29 - ns td(OFF) Turn-Off Delay Time - 45 - ns tf Fall Time - 18 - ns tOFF Turn-Off Time - - 94 ns ISD = 10.2A - - 1.25 V ISD = 2.1A - - 1.0 V VDD = 15V, ID = 10.2A VGS = 10V, RGS = 16Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 10.2A, dISD/dt = 100A/µs - - 19 ns QRR Reverse Recovered Charge ISD = 10.
12 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 VGS = 10V 9 VGS = 4.5V 6 3 0.2 RθJA=50oC/W 0 0 0 25 50 75 125 100 150 25 50 TA , AMBIENT TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Ambient Temperature 75 100 125 TA , AMBIENT TEMPERATURE (oC) 150 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.
80 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 10 STARTING TJ = 25oC 60 VDS = 5V 40 TJ = 25oC 20 TJ = 150oC STARTING TJ = 150oC 0 1 1 0.01 0.1 1 10 2 100 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 6. Transfer Characteristics NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5.
2000 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX CISS = CGS + CGD 1000 1.4 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 1.6 1.2 1.0 VGS = 10V, ID = 10.2A 0.8 -80 -40 0 40 80 120 VGS = 0V, f = 1MHz 10 160 0.1 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 8 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 10.
BVDSS VDS tP VDS L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VDD + RG VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDS VDD Qg(TOT) VDS VGS L VGS = 10V Qg(5) VGS + - Qgs2 VDD DUT VGS = 5V VGS = 1V Ig(REF) 0 Qg(TH) Qgs Qgd Ig(REF) 0 Figure 17. Gate Charge Test Circuit Figure 18.
The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA (oC), and thermal resistance RθJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
.SUBCKT FDS8878 2 1 3 *February 2005 Ca 12 8 7.8e-10 Cb 15 14 7.8e-10 Cin 6 8 .78e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD DRAIN 2 5 10 ESLC + LGATE GATE 1 Lgate 1 9 5.29e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 0.18e-9 Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 1.6e-3 Rgate 9 20 2.3 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 8.
REV February 2005 template FDS8878 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=2.0e-12,ikf=10,nl=1.01,rs=7.0e-3,trs1=8e-4,trs2=2e-7,cjo=3.5e-10,m=0.55,tt=7e-11,xti=2) dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=3.8e-10,isl=10e-30,nl=10,m=0.45) m..model mstrongmod = (type=_n,vto=2.36,kp=150,is=1e-30, tox=1) m..model mmedmod = (type=_n,vto=1.95,kp=5.0,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.57,kp=0.02,is=1e-30, tox=1,rs=0.
JUNCTION th REV February 2005 FDS8878T Copper Area =1.0 in2 CTHERM1 TH 8 2.0e-3 CTHERM2 8 7 5.0e-3 CTHERM3 7 6 1.0e-2 CTHERM4 6 5 4.0e-2 CTHERM5 5 4 9.0e-2 CTHERM6 4 3 2e-1 CTHERM7 3 2 1 CTHERM8 2 TL 3 RTHERM1 CTHERM1 8 RTHERM2 RTHERM1 TH 8 1e-1 RTHERM2 8 7 5e-1 RTHERM3 7 6 1 RTHERM4 6 5 5 RTHERM5 5 4 8 RTHERM6 4 3 12 RTHERM7 3 2 18 RTHERM8 2 TL 25 RTHERM3 SABER Thermal Model RTHERM4 CTHERM2 7 CTHERM3 6 2 Copper Area = 1.0 in template thermal_model th tl thermal_c th, tl { ctherm.
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