FDS8880 N-Channel PowerTrench® MOSFET tm 30V, 11.6A, 10mΩ Features General Description rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.
Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) 11.6 A Continuous (TA = 25 C, VGS = 4.5V, RθJA = 50 C/W) 10.7 A Drain Current ID o EAS PD TJ, TSTG o Pulsed 83 A Single Pulse Avalanche Energy (Note 1) 82 mJ Power dissipation 2.
tON Turn-On Time - - 51 ns td(ON) Turn-On Delay Time - 7 - ns tr Rise Time - 27 - ns td(OFF) Turn-Off Delay Time - 38 - ns tf Fall Time - 15 - ns tOFF Turn-Off Time - - 80 ns ISD = 11.6A - - 1.25 V ISD = 2.1A - - 1.0 V VDD = 15V, ID = 11.6A VGS = 10V, RGS = 11Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 11.6A, dISD/dt = 100A/µs - - 30 ns QRR Reverse Recovered Charge ISD = 11.
12 1.0 10 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 VGS = 10V 8 VGS = 4.5V 6 4 2 0.2 RθJA=50oC/W 0 0 0 25 50 75 125 100 150 25 50 Figure 1. Normalized Power Dissipation vs Ambient Temperature NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) TA , AMBIENT TEMPERATURE (oC) Figure 2. Maximum Continuous Drain Current vs Ambient Temperature DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.
0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 ID , DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC 40 TJ = 25oC 30 20 TJ = 150oC 1 0.1 1 10 tAV, TIME IN AVALANCHE (ms) 0 1.5 100 2.5 3.0 3.5 Figure 6. Transfer Characteristics Figure 5. Unclamped Inductive Switching Capability 50 50 PULSE DURATION = 80µs DUTY CYCLE = 0.
2000 1000 1.05 1.00 0.95 COSS ≅ CDS + CGD CRSS = CGD VGS = 0V, f = 1MHz 0.90 -80 -40 0 40 80 120 100 0.1 160 TJ , JUNCTION TEMPERATURE (oC) Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 30 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 12.
BVDSS VDS tP VDS L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VDD + RG VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDS VDD Qg(TOT) VDS VGS L VGS = 10V Qg(5) VGS + - Qgs2 VDD DUT VGS = 5V VGS = 1V Ig(REF) 0 Qg(TH) Qgs Qgd Ig(REF) 0 Figure 17. Gate Charge Test Circuit Figure 18.
The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA (oC), and thermal resistance RθJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
rev August 2004 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD DRAIN 2 5 10 Ebreak 11 7 17 18 33.5 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 5 51 + LGATE GATE 1 RLgate 1 9 36 RLdrain 2 5 10 RLsource 3 7 1.
REV August 2004 template FDS8880 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=2.6e-12,ikf=10,nl=1.01,rs=5.6e-3,trs1=8e-4,trs2=2e-7,cjo=5e-10,m=0.55,tt=1e-11,xti=2) dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=4.27e-10,isl=10e-30,nl=10,m=0.38) m..model mmedmod = (type=_n,vto=1.8,kp=5,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.21,kp=150,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.53,kp=0.05,is=1e-30, tox=1,rs=0.1) sw_vcsp..
JUNCTION th REV August 2004 FDS8880 Copper Area =1.0 in2 CTHERM1 TH 8 2.0e-3 CTHERM2 8 7 5.0e-3 CTHERM3 7 6 1.0e-2 CTHERM4 6 5 4.0e-2 CTHERM5 5 4 9.0e-2 CTHERM6 4 3 2e-1 CTHERM7 3 2 1 CTHERM8 2 TL 3 RTHERM1 CTHERM1 8 RTHERM2 RTHERM1 TH 8 1e-1 RTHERM2 8 7 5e-1 RTHERM3 7 6 1 RTHERM4 6 5 5 RTHERM5 5 4 8 RTHERM6 4 3 12 RTHERM7 3 2 18 RTHERM8 2 TL 25 RTHERM3 SABER Thermal Model RTHERM4 CTHERM2 7 CTHERM3 6 2 Copper Area = 1.0 in template thermal_model th tl thermal_c th, tl { ctherm.
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