Datasheet

February 2006
FDS8884 N-Channel PowerTrench
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
www.fairchildsemi.com1
FDS8884
N-Channel PowerTrench
®
MOSFET
30V, 8.5A, 23mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Features
 Max r
DS(on)
= 23mΩ at V
GS
= 10V, I
D
= 8.5A
 Max r
DS(on)
= 30mΩ at V
GS
= 4.5V, I
D
= 7.5A
 Low gate charge
 100% R
G
Tested
 RoHS Compliant
L
E
A
D
F
R
E
E
M
T
A
E
L
N
T
I
O
M
P
E
N
I
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current Continuous (Note 1a) 8.5 A
Pulsed 40 A
E
AS
Single Pulse Avalanche Energy (Note 2) 32 mJ
P
D
Power dissipation 2.5 W
Derate above 25
o
C20mW/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 150
o
C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
o
C/W
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8884 FDS8884 SO-8 330mm 12mm 2500 units
4
3
2
1
5
6
7
8
S
D
S
S
SO-8
D
D
D
G