Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS89141, MOSFET

December 2010

FDS89141 Dual N-Channel PowerTrench

MOSFET

FDS89141 Rev.C

FDS89141

Dual N-Channel PowerTrench

MOSFET

100 V, 3.5 A, 62 mΩ

Features

 Max r

DS(on)

= 62 mΩ at V

= 10 V, I

= 3.5 A

 Max r

DS(on)

= 100 mΩ at V

= 6 V, I

= 2.8 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for

DS(on)

, switching performance and

ruggedness

Applications

 Synchronous Rectifier

 Primary Switch For Bridge Topology

Pin 1

SO-8

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 3.5

-Pulsed 18

Single Pulse Avalanche Energy (Note 3) 37 mJ

Power Dissipation T

= 25 °C (Note 1a) 31

Power Dissipation T

= 25 °C (Note 1b) 1.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 4.0

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

Device Marking Device Package Reel Size Tape Width Quantity

FDS89141 FDS89141 SO-8 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDS89141 Dual N-Channel PowerTrench® MOSFET 100 V, 3.5 A, 62 mΩ Features General Description Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A been optimized for High performance trench technology for extremely low rDS(on) rDS(on), switching performance and ruggedness.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 69 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
5.0 VGS = 10 V VGS = 7 V 15 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 18 VGS = 6 V 12 VGS = 5.5 V 9 6 VGS = 5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4.5 4.0 VGS = 5 V 3.5 VGS = 5.5 V 3.0 VGS = 6 V 2.5 2.0 VGS = 7 V 1.5 1.0 0.5 VGS = 10 V 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 18 400 ID = 3.5 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
FDS89141 Dual N-Channel PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted 400 VDD = 25 V ID = 3.5 A Ciss 8 100 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 2 0 0 1 2 3 4 5 1 0.1 6 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. C 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.