Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS89161, MOSFET

June 2011

FDS89161 Dual N-Channel PowerTrench

MOSFET

FDS89161 Rev. C2

FDS89161

Dual N-Channel PowerTrench

MOSFET

100 V, 2.7 A, 105 mΩ

Features

 Max r

DS(on)

= 105 mΩ at V

= 10 V, I

= 2.7 A

 Max r

DS(on)

= 171 mΩ at V

= 6 V, I

= 2.1 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for

DS(on)

, switching performance and

ruggedness

Applications

 Synchronous Rectifier

 Primary Switch For Bridge Topology

Pin 1

SO-8

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 2.7

-Pulsed 15

Single Pulse Avalanche Energy (Note 3) 13 mJ

Power Dissipation T

= 25 °C 31

Power Dissipation T

= 25 °C (Note1a) 1.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 4.0

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

Device Marking Device Package Reel Size Tape Width Quantity

FDS89161 FDS89161 SO-8 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDS89161 Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features General Description Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A been optimized for High performance trench technology for extremely low rDS(on) rDS(on), switching performance and ruggedness.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 67 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
15 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 VGS = 10 V VGS = 7 V 12 9 VGS = 6 V 6 VGS = 5.5 V 3 VGS = 5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 VGS = 5 V VGS = 5.5 V 3 VGS = 6 V 2 VGS = 7 V 1 0 4 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 0.
PAGE 4
300 VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 25 V ID = 2.7 A Ciss 100 CAPACITANCE (pF) 8 VDD = 50 V 6 VDD = 65 V 4 Coss 10 2 f = 1 MHz VGS = 0 V 0 0 1 2 3 1 0.1 4 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 3 ID, DRAIN CURRENT (A) 3.0 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 2.5 TJ = 25 oC 2.0 TJ = 100 oC 1.5 VGS = 10 V 2 VGS = 6 V 1 o RθJA = 78 C/W TJ = 125 oC 1.0 0.01 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDS89161 Rev. C2 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.