Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS89161LZ, MOSFET

June 2011

FDS89161LZ Dual N-Channel PowerTrench

MOSFET

FDS89161LZ Rev. C4

FDS89161LZ

Dual N-Channel PowerTrench

MOSFET

100 V, 2.7 A, 105 mΩ

Features

 Max r

DS(on)

= 105 mΩ at V

= 10 V, I

= 2.7 A

 Max r

DS(on)

= 160 mΩ at V

= 4.5 V, I

= 2.1 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 CDM ESD protection level > 2KV typical (Note 4)

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel logic Level MOSFETs are produced using

Fairchild Semiconductor‘s advanced Power Trench

process

that has been special tailored to minimize the on-state

resisitance and yet maintain superior switching performance.

G-S zener has been added to enhance ESD voltage level

Application

 DC-DC conversion

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 2.7

-Pulsed 15

Single Pulse Avalanche Energy (Note 3) 13 mJ

Power Dissipation T

= 25 °C 31

Power Dissipation T

= 25 °C (Note1a) 1.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 4.0

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

Device Marking Device Package Reel Size Tape Width Quantity

FDS89161LZ FDS89161LZ SO-8 13 ’’ 12 mm 2500 units

Pin 1

SO-8

Summary of content (6 pages)

PAGE 1
FDS89161LZ Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features General Description Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 2.
PAGE 3
4 VGS = 10 V VGS = 8 V VGS = 6 V 12 VGS =5 V VGS = 4 V 9 6 VGS = 3.5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 3.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 15 3 VGS = 5 V 2 VGS = 6 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 15 500 ID = 2.7 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.
PAGE 4
00 VDD = 25 V ID = 2.7 A Ciss 8 100 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 1 Figure 7. Gate Charge Characteristics 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 3.0 2.5 TJ = 25 oC 2.0 TJ = 100 oC 1.5 3 VGS = 10 V 2 VGS = 6 V 1 o RθJA = 78 C/W TJ = 125 oC 1.0 0.01 0.
PAGE 5
P(PK), PEAK TRANSIENT POWER (W) 1000 100 10 SINGLE PULSE o RθJA = 135 C/W 1 o TA = 25 C 0.5 -4 10 -3 -2 10 -1 10 10 1 2 10 3 10 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.