Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS8928A, MOSFET

July 1998

FDS8928A

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description Features

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units

DSS

Drain-Source Voltage 30 -20 V

GSS

Gate-Source Voltage 8 -8 V

Drain Current - Continuous (Note 1a) 5.5 -4 A

- Pulsed 20 -20

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

STG

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

FDS8928A Rev. B

SOIC-16SOT-23 SuperSOT

-8 SO-8 SOT-223

SuperSOT

-6

These dual N- and P -Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for low

voltage applications such as notebook computer power

management and other battery powered circuits where fast

switching, low in-line power loss, and resistance to

transients are needed.

N-Channel 5.5 A,30 V, R

DS(ON)

=0.030 Ω @ V

=4.5 V

DS(ON)

=0.038 Ω @ V

=2.5 V.

P-Channel -4 A,-20 V, R

DS(ON)

=0.055 Ω @ V

=-4.5 V

DS(ON)

=0.072 Ω @ V

=-2.5 V.

High density cell design for extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

SO-8

FDS

8928A

pin 1

Summary of content (9 pages)

PAGE 1
July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
PAGE 2
Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ VGS = 0 V, ID = 250 µA N-Ch 30 VGS = 0 V, ID = -250 µA P-Ch -20 ID = 250 µA, Referenced to 25 oC N-Ch 32 ID = -250 µA, Referenced to 25 oC P-Ch -23 VDS = 24 V, VGS = 0 V N-Ch VDS = -16 V, VGS = 0 V Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp.
PAGE 3
Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type tD(on) Turn - On Delay Time VDS = 6 V, I D = 1 A VGS = 4.5 V , RGEN = 6 Ω tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Qgd Typ Max Units N-Ch 6 12 ns P-Ch 8 16 N-Ch 19 31 37 ns P-Ch 23 VDS= -10 V, I D = -1 A N-Ch 42 67 VGS = -4.
PAGE 4
Typical Electrical Characteristics: N-Channel 2 VGS = 4.5V 2.5V R DS(ON) , NORMALIZED 3.0V 24 2.0V 18 12 6 1.5V DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 30 1.6 VGS = 2.0V 2.5 V 1.2 3.0V 3.5 V 4.5V 0.8 0 0 1 2 3 4 0 5 6 12 30 0.1 I D = 5.5 A 1.6 I D = 3A VGS = 4.5 V R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.075 0.05 TA = 125°C 0.
PAGE 5
Typical Electrical Characteristics: N-Channel (continued) 3000 ID = 5.5A VDS = 5V 10V 15V 4 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 5 3 2 1000 C oss 200 80 1 30 0.1 0 0 5 10 15 20 25 RD S(O N IT 100 1m 10m 100 1 1s 10s DC 0.3 VGS = 4.5V SINGLE PULSE RθJA =135 °C/W TA = 25°C 0.2 us 2 5 10 30 SINGLE PULSE RθJA =135 °C/W TA = 25°C 25 s 3 0.01 0.1 1 30 IM )L 0.5 s POWER (W) I D , DRAIN CURRENT (A) 50 0.03 0.4 Figure 8. Capacitance Characteristics. Figure 7.
PAGE 6
2 VGS = -4.5V -3.5V -3.0V 24 R DS(ON), NORMALIZED 30 - 2.5V 18 -2.0V 12 -1.5V 6 0 DRAIN-SOURCE ON-RESISTANCE -ID , DRAIN-SOURCE CURRENT (A) Typical Electrical Characteristics: P-Channel 1.6 VGS = - 2.0V -2.5 V -3.5V -4.5V 0.8 0 1 2 3 4 -3.0 V 1.2 5 0 6 I D = -4.0A R DS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 24 30 0.2 1.6 V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 I D = -2A 0.15 0.1 TA = 125°C 0.
PAGE 7
Typical Electrical Characteristics: P-Channel (continued) 3000 ID =-4.0A 2000 VDS = -5V 4 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 5 -10V -15V 3 2 Ciss 1000 Coss 500 200 Crss 100 1 50 0.1 0 0 4 8 12 16 20 f = 1 MHz V GS = 0 V 0.2 0.5 1 2 5 10 20 -VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 30 50 10 5 ) ON S( RD 100 IT LIM 1m 1 1s 10s DC 0.3 0.1 0.03 0.01 0.
PAGE 8
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Typical Thermal Characteristics: N & P-Channel (continued) 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA =135°C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t1 /t2 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1.
PAGE 9
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