Datasheet

November 2010
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
www.fairchildsemi.com
1
FDS8935 Dual P-Channel PowerTrench
®
MOSFET
FDS8935
Dual P-Channel PowerTrench
®
MOSFET
-80 V, -2.1 A, 183 mΩ
Features
 Max r
DS(on)
= 183 mΩ at V
GS
= -10 V, I
D
= -2.1 A
 Max r
DS(on)
= 247 mΩ at V
GS
= -4.5 V, I
D
= -1.9 A
 High performance trench technology for extremely low r
DS(on)
 High power and current handling capability in a widely used
surface mount package
 100% UIL Tested
 RoHS Compliant
General Description
 This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for r
DS(on)
, switching performance and
ruggedness.
Applications
 Load Switch
 Synchronous Rectifier
G2
S1
G1
S2
D2
D2
D1
D1
5
6
7
8
3
2
1
4
Pin 1
SO-8
D1
D1
D2
D2
S2
S1
G1
G2
4
3
2
1
5
6
7
8
Q2
Q1
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -80 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous -2.1
A
-Pulsed -10
E
AS
Single Pulse Avalanche Energy (Note 3) 37 mJ
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 3.1
W
Power Dissipation T
A
= 25 °C (Note 1b) 1.6
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 40
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 78
Device Marking Device Package Reel Size Tape Width Quantity
FDS8935 FDS8935 SO-8 13 ’’ 12 mm 2500 units