Datasheet

tm
October 2006
FDS8949 Dual N-Channel Logic Level PowerTrench
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDS8949 Rev. B1
www.fairchildsemi.com1
FDS8949
Dual N-Channel Logic Level PowerTrench
®
MOSFET
40V, 6A, 29m
Features
Max r
DS(on)
= 29m at V
GS
= 10V
Max r
DS(on)
= 36m at V
GS
= 4.5V
Low gate charge
High performance trench technology for extremely low
r
DS(on)
High power and current handling capability
RoHS compliant
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench
®
process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Inverter
Power suppliers
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 6
A
-Pulsed 20
E
AS
Drain-Source Avalanche Energy (Note 3) 26 mJ
P
D
Power Dissipation for Dual Operation 2
W
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
1.6
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150 °C
R
θJA
Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 81
°C/WR
θJA
Thermal Resistance-Single operation, Junction to Ambient (Note 1b) 135
R
θJC
Thermal Resistance, Junction to Case (Note 1) 40
Device Marking Device Reel Size Tape Width Quantity
FDS8949 FDS8949 13’ 12mm 2500 units
Pin 1
SO-8
D1
D1
D2
D2
S2
S1
G1
G2

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