Datasheet
FDS8958A_F085
Dual N & P-Channel PowerTrench
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 30V R
DS(on)
= 0.028Ω
@ V
GS
= 10V
R
DS(on)
= 0.040Ω
@ V
GS
= 4.5V
• Q2: P-Channel
-5A, -30V R
DS(on)
= 0.052Ω
@ V
GS
= -10V
R
DS(on)
= 0.080Ω
@ V
GS
= -4.5V
• Fast switching speed
• High power and handling capability in a widely
used surface mount package
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter Q1 Q2 Units
V
DSS
Drain-Source Voltage 30 30 V
V
GSS
Gate-Source Voltage
±20 ±20
V
I
D
Drain Current - Continuous
(Note 1a)
7 -5
- Pulsed 20 -20
A
P
D
Power Dissipation for Dual Operation 2 2
Power Dissipation for Single Operation
(Note 1a)
1.6 1.6
(Note 1c)
0.9 0.9
W
E
AS
Single Pulse Avalanche Energy
(Note 3)
54 13 mJ
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS8958A FDS8958A_F085 13” 12mm 2500 units
tm
February 2010
FDS8958A
FDS8958A_F085 Dual N & P-Channel PowerTrench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDS8958A_F085 Rev. A
www.fairchildsemi.com1
Qualified to AEC Q101
RoHS Compliant
•
•