Datasheet

FDS8960C Rev C1(W) www.fairchildsemi.com
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Avalanche Ratings
V
DD
= 35 V, I
D
= 7 A, L = 1 mH Q1 24.5 mJ
E
AS
Drain-Source Avalanche
Energy (Single Pulse)
V
DD
= –35 V, I
D
=–5 A, L = 1 mH Q2 12.5 mJ
I
AS
Drain-Source Avalanche
Current
Q1
Q2
7
–5
A
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= –250 μA
Q1
Q2
35
–35
V
ΔBVDSS
ΔT
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250 μA, Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
Q1
Q2
31
–40
mV/°C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 28 V, V
GS
= 0 V
V
DS
= –28 V, V
GS
= 0 V
Q1
Q2
1
–1
μA
I
GSSF
Gate-Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate-Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V
Q1
–100 nA
I
GSSR
Gate-Body Leakage, Forward V
GS
= 25 V, V
DS
= 0 V 100 nA
I
GSSF
Gate-Body Leakage, Reverse V
GS
= –25 V, V
DS
= 0 V
Q2
–100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= –250 µA
Q1
Q2
1
–1
2
–1.8
3
–3
V
ΔVGS(th)
ΔT
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
Q1
Q2
–5
4
mV/°C
V
GS
= 10 V, I
D
= 7 A
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 7 A, T
J
= 125°C
Q1 20
25
29
24
32
37
mΩ
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= –10 V, I
D
= –5 A
V
GS
= –4.5 V, I
D
= –4 A
V
GS
= –10 V, I
D
= –5 A, T
J
= 125°C
Q2 44
70
61
53
87
79
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 7 A
V
DS
= –5 V, I
D
=–5 A
Q1
Q2
23
9
S
Dynamic Characteristics
C
iss
Input Capacitance Q1
Q2
570
540
pF
C
oss
Output Capacitance Q1
Q2
126
113
pF
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= –15 V, V
GS
= 0 V, f = 1.0 MHz
Q1
Q2
52
60
pF
R
G
Gate Resistance f = 1.0 MHz Q1
Q2
2
6
Ω
FD
S8960C
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