Datasheet

FDS8978 Dual N-Channel PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
1
G2
S2
G1
S1
D2
D2
D1
D1
D1
D2
S1
G1
S2
G2
D1
D2
1
2
3
4
8
7
6
5
Q1
Q2
Pin 1
SO-8
FDS8978
N-Channel PowerTrench
®
MOSFET
30V, 7.5A, 18mΩ
Features
 r
DS(on)
= 18mΩ, V
GS
= 10V, I
D
= 7.5A
 r
DS(on)
= 21mΩ, V
GS
= 4.5V, I
D
= 6.9A
 High performance trench technology for extremely low
r
DS(on)
 Low gate charge
 High power and current handling capability
 100% Rg Tested
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Applications
 DC/DC converters
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
7.5 A
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θJA
= 50
o
C/W) 6.9 A
Pulsed 49 A
E
AS
Single Pulse Avalanche Energy (Note 1) 57 mJ
P
D
Power dissipation 1.6 W
Derate above 25
o
C13mW/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 150
o
C
R
θJC
Thermal Resistance, Junction to Case (Note 2) 40
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 2a) 78
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 2c) 135
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8978 FDS8978 SO-8 330mm 12mm 2500 units
January 2011
www.fairchildsemi.com