Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS8984_F085, MOSFET

Fabruary 2010

FDS8984_F085 N-Channel PowerTrench

MOSFET

FDS8984_F085 Rev. A

www.fairchildsemi.com1

FDS8984_F085

N-Channel PowerTrench

MOSFET

30V, 7A, 23mΩ

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

DS(ON)

and fast switching speed.

Features

 Max r

DS(on)

= 23mΩ, V

= 10V, I

= 7A

 Max r

DS(on)

= 30mΩ, V

= 4.5V, I

= 6A

 Low gate charge

 100% R

tested



Qualified to AEC Q101

MOSFET Maximum Ratings

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current Continuous (Note 1a) 7 A

Pulsed 30 A

Single Pulse Avalache Energy (Note 2) 32 mJ

Power Dissipation for Single Operation 1.6 W

Derate above 25°C 13 mW/°C

, T

STG

Operating and Storage Temperature -55 to 150 °C

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDS8984 FDS8984_F085 SO-8 330mm 12mm 2500 units

SO-8

Pin 1

SO-8

 RoHS Compliant

Summary of content (6 pages)

PAGE 1
FDS8984_F085 N-Channel PowerTrench® MOSFET tm 30V, 7A, 23mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A Max rDS(on) = 30mΩ, VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V,VDS = 0V 30 V 23 mV/°C 1 TJ = 125°C 250 µA ±100 nA 2.
PAGE 3
RDS(ON), NORMALIZED ID, DRAIN CURRENT (A) VGS=10V PULSE DURATION =80µS DUTY CYCLE =0.5% MAX VGS=5.0V VGS=3.5V 20 VGS=4.5V VGS=4.0V 10 VGS=3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 1. On Region Characteristics RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 7A VGS = 10V 1.2 1.0 0.8 -40 0 40 80 120 PULSE DURATION =80µS DUTY CYCLE =0.5% MAX 2.5 VGS=3.0V 2.0 VGS=3.5V VGS=4.0V 1.5 1.0 VGS=5.0V 0.5 5 160 Figure 3.
PAGE 4
= 25°C unless otherwise noted 700 VGS, GATE TO SOURCE VOLTAGE(V) 10 600 CISS VDD = 15V VDD = 10V 6 4 CAPACITANCE (pF) 8 VDD = 20V 2 500 f = 1MHz VGS = 0V 400 COSS 300 200 100 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 CRSS 0.1 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs Drain to Source Voltage 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 20 10 O STARTING TJ = 25 C O STARTING TJ = 125 C 1 0.01 0.1 7 6 VGS=10V 5 4 VGS=4.
PAGE 5
Normalized Thermal Impedance ZθJA 2 1 0.1 = 25°C unless otherwise noted DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 1E-3 1E-4 -5 10 t2 SINGLE PULSE -4 10 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -2 -1 10 10 0 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve FDS8984_F085 Rev. A 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.