Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS9400A, MOSFET

December 2001

2001 Fairchild Semiconductor Corporation

FDS9400A Rev B1(W)

FDS9400A

30V P-Channel PowerTrench







MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –3.4 A, –30 V R

DS(ON)

= 130 mΩ @ V

= –10 V

DS(ON)

= 200 mΩ @ V

= –4.5 V

• Low gate charge (2.4nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –30 V

GSS

Gate-Source Voltage

±25

Drain Current – Continuous (Note 1a) –3.4 A

– Pulsed –10

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 50

°C/W

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1c) 125

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9400A FDS9400A 13’’ 12mm 2500 units

FDS9400A

Summary of content (5 pages)

PAGE 1
FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –3.4 A, –30 V Applications • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) RDS(ON) = 130 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse VGS = 25 V, VGS = –25 V, VDS = 0 V VDS = 0 V 100 –100 NA NA –3 V On Characteristics ID = –250 µA, Referenced to 25°C –23 mV/°C (
PAGE 3
FDS9400A Typical Characteristics 2 VGS = -10V -6.0V -5.0V -4.5V 8 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 -4.0V 6 4 -3.5V 2 -3.0V 0 1.8 VGS=-4.5V 1.6 -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V 0.8 0 1 2 3 4 5 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.55 ID = -1A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.
PAGE 4
FDS9400A Typical Characteristics 10 300 -VGS, GATE-SOURCE VOLTAGE (V) ID = -1A VDS = -5V -10V CAPACITANCE (pF) -15V 6 4 CISS 200 150 COSS 100 2 50 CRSS 0 0 1 2 3 4 0 5 0 5 Qg, GATE CHARGE (nC) 20 25 30 50 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 10 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100µs RDS(ON) LIMIT 1ms 10ms 100ms 1 DC VGS = -10V SINGLE PULSE RθJA = 125oC/W 0.
PAGE 5
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