Datasheet

FDS9431A
FDS9431A Rev. A2
Features
-3.5 A, -20 V. R
DS(ON)
= 0.130 @ V
GS
= -4.5 V
R
DS(ON)
= 0.180 @ V
GS
= -2.5 V.
Fast switching speed.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
September 1999
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage -20 V
V
GSS
Gate-Source Voltage
±
8
V
I
D
Drain Current - Continuous
(Note 1a)
-3.5 A
- Pulsed -18
Power Dissipation for Sin
g
le Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
q
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
C/W
R
q
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9431A FDS9431A 13’’ 12mm 2500 units
FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
DC/DC converter
Power management
Load switch
Battery protection
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2

Summary of content (5 pages)