Datasheet

July 2003
2003 Fairchild Semiconductor Corp.
FDS9926A Rev E (W)
FDS9926A
Dual N-Channel 2.5V Specified PowerTrench

MOSFET
General Description
These N-Channel 2.5V specified MOSFETs use
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Applications
• Battery protection
• Load switch
• Power management
Features
6.5 A, 20 V. R
DS(ON)
= 30 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 43 mΩ @ V
GS
= 2.5 V.
• Optimized for use in battery protection circuits
• Low gate charge
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
±10
I
D
Drain Current – Continuous (Note 1a) 6.5 A
– Pulsed 20
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9926A FDS9926A 13’’ 12mm 2500 units
FDS9926A