Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS9933A, MOSFET

FDS9933A

FDS9933A Rev. C

FDS9933A

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

These P-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

November 1998

Features

• -3.8 A, -20 V. R

DS(on)

= 0.075 Ω @ V

= -4.5 V

DS(on)

= 0.105 Ω @ V

= -2.5 V.

• Low gate charge ( 7nC typical ).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(on)

• High power and current handling capability.

1998 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

=25

C unless otherwise noted

Symbol Parameter FDS9933A Units

DSS

Drain-Source Voltage -20 V

GSS

Gate-Source Voltage

Drain Current - Continuous

(

Note 1a

)

-3.8 A

- Pulsed -20

Power Dissipation for Dual Operation 2.0

Power Dissipation for Sin

le Operation

(

Note 1a

)

1.6

(

Note 1b

)

1.0

(

Note 1c

)

0.9

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width

Quantity

FDS9933A FDS9933A 13’’ 12mm 2500 units

Applications

• Load switch

• DC/DC converter

• Motor drives

SO-8

Summary of content (5 pages)

PAGE 1
FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • -3.8 A, -20 V. RDS(on) = 0.075 Ω RDS(on) = 0.105 Ω @ VGS = -2.5 V. Applications • Load switch • DC/DC converter • Motor drives • Low gate charge ( 7nC typical ).
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units -16 mV/°C Off Characteristics VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C BVDSS Drain-Source Breakdown Voltage ∆ΒVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics -20 V -1 (Note 2
PAGE 3
(continued) 0 . 12 20 V G S= -4.5V -3. 5V V GS = -2 . 0 V -3.0V 15 R DS( ON ) , NORM A LIZED D R AI N -SOU RC E ON -R ESI ST A NC E - I D , D R AI N -S OU R C E CU R R E NT (A) FDS9933A Typical Characteristics -2.5V 10 -2.0V 5 -1.5V 0 0 1 2 3 4 0. 1 -2 . 5 V -3 . 0 V 0 . 08 -3 . 5 V -4 . 5 V 0 . 06 0 . 04 5 0 4 8 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 .6 0.25 1 .4 ID = -3. 8A V GS = -4 .5V 1 .
PAGE 4
(continued) 5 2000 I D = -3 .8 A V D S = -5 V 4 1000 -10 V -15 V C AP AC I TA NC E (pF) -V G S , GATE -SOU R C E V OLTAG E (V ) FDS9933A Typical Characteristics 3 2 1 Ciss 500 200 Coss f = 1 M Hz VG S = 0 V 100 0 0 2 4 6 8 50 0.1 10 0.2 Q g , GA TE C H AR GE (nC ) 50 100 ( ON ) LI 1m M IT 10 m 3 100 V G S = -4.5V SING L E PUL S E R θJ A = 135 °C/ W A TA = 2 5°C 0. 05 0. 01 0 .
PAGE 5
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