Datasheet

March 2006
2006 Fairchild Semiconductor Corporation
FDS9934C Rev D(W)
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: 6.5 A, 20 V. R
DS(ON)
= 30 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 43 mΩ @ V
GS
= 2.5 V.
• Q2: –5 A, –20 V, R
DS(ON)
= 55 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 90 mΩ @ V
GS
= –2.5 V
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Ratings UnitsSymbol Parameter
Q1 Q2
V
DSS
Drain-Source Voltage
20 –20
V
V
GSS
Gate-Source Voltage
±10
±12
V
I
D
Drain Current – Continuous (Note 1a)
6.5 –5
A
– Pulsed
20 –30
Power Dissipation for Dual Operation 2
W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9934C FDS9934C 13’’ 12mm 2500 units
FDS9934C