Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS9945, MOSFET

February 2001

2001 Fairchild Semiconductor Corporation FDS9945 Rev B(W)

FDS9945

60V N-Channel PowerTrench



MOSFET

General Description

These N Channel Logic Level MOSFET have been

designed specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers.

The MOSFET feature faster switching and lower gate

charge than other MOSFET with comparable RDS(on)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 3.5 A, 60 V. R

DS(ON)

= 0.100Ω @ V

= 10 V

DS(ON)

= 0.200Ω @ V

= 4.5V

• Optimized for use in switching DC/DC converters

with PWM controllers

• Very fast switching

• Low gate charge.

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 60 V

GSS

Gate-Source Voltage ±20 V

Drain Current – Continuous (Note 1a) 3.5 A

– Pulsed 10

Power Dissipation for Single Operation (Note 1a) 2

(Note 1b)

1.6

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +175 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 (steady state), 50 (10 sec) °C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1c) 135 °C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9945 FDS9945 13’’ 12mm 2500 units

FDS9945

Summary of content (5 pages)

PAGE 1
FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Optimized for use in switching DC/DC converters with PWM controllers The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. • Very fast switching • Low gate charge.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = 250 µA V DS = 48 V, V GS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –20 V V DS = 0 V –100 nA 3 V On Characteristics 60 ID = 250 µA, Referenced to 25°C V 62.
PAGE 3
FDS9945 Typical Characteristics 2.2 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 10V I D, DRAIN CURRENT (A) 6.0V 5.0V 15 4.5V 10 4.0V 5 2 VGS = 4.0V 1.8 1.6 4.5V 1.4 5.0V 6.0V 1.2 10V 1 0.8 0 0 1 2 3 4 0 5 3 Figure 1. On-Region Characteristics. 9 12 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 2 ID = 3.5A VGS = 10V 1.
PAGE 4
FDS9945 Typical Characteristics 600 ID = 3.5A VD S = 20V 30V CISS 40V 6 4 400 300 200 COSS 2 100 C RSS 0 0 0 4 8 12 16 0 5 Q g, GATE CHARGE (nC) 15 25 30 P(pk), PEAK TRANSIENT POWER (W) 50 100µs R DS(ON) LIMIT 1ms 10ms 1 100ms 1s VGS = 10V SINGLE PULSE o Rθ JA = 135 C/W 0.1 DC 10s o T A = 25 C 0.01 0.1 1 10 SINGLE PULSE Rθ JA = 135°C/W T A = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 VDS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1 , TIME (sec) Figure 9.
PAGE 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.