Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS9953A, MOSFET

May 2001

2001 Fairchild Semiconductor Corporation FDS9953A Rev B(W)

FDS9953A

Dual 30V P-Channel PowerTrench



MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –2.9 A, –30 V R

DS(ON)

= 130 mΩ @ V

= –10 V

DS(ON)

= 200 mΩ @ V

= –4.5 V

• Low gate charge (2.5nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage

–30

GSS

Gate-Source Voltage

±25

Drain Current – Continuous (Note 1a)

±2.9

– Pulsed

±10

Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

(Note 1c)

0.9

, T

STG

Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9953A FDS9953A 13’’ 12mm 2500 units

FDS9953A

Summary of content (6 pages)

PAGE 1
FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –2.9 A, –30 V Applications • Fast switching speed • Power management • Load switch • High performance trench technology for extremely low RDS(ON) • Battery protection • Low gate charge (2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ∆BV DSS ∆TJ IDSS Drain–Source Breakdown V GS = 0 V, ID = –250 µA Voltage Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient V GS = 0 V Zero Gate Voltage Drain Current V DS = –24 V, IGSSF Gate–Body Leakage, Forward V GS = –25 V, V DS = 0 V –100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = 25 V, V DS = 0 V 100 nA BV DSS On Characteristics –30 V –23 mV/°C –2
PAGE 3
FDS9953A Typical Characteristics Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2.
PAGE 4
FDS9953A Typical Characteristics 3.5 10 V GS = -10V -I D, DRAIN CURRENT (A) 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -4.5V 6 -4.0V 4 -3.5V 2 -3.0V 3 V GS = -3.5V 2.5 -4.0V 2 -4.5V -5.0V 1.5 -6.0V -10V 1 0.5 0 0 1 2 3 4 0 5 2 Figure 1. On-Region Characteristics. 6 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.5 ID = -1A VGS = -10V ID = -0.
PAGE 5
FDS9953A Typical Characteristics 300 V DS = -5V ID =-1.0 A -10V f = 1MHz VGS = 0 V 250 8 CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 4 2 CISS 200 150 100 COSS 50 CRSS 0 0 0 1 2 3 4 5 0 5 Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics.
PAGE 6
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