Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS9958, MOSFET

July 2007

FDS9958 Rev.C

www.fairchildsemi.com

FDS9958 Dual P-Channel PowerTrench

MOSFET

FDS9958

Dual P-Channel PowerTrench

MOSFET

-60V, -2.9A, 105mΩ

Features

 Max r

DS(on)

=105mΩ at V

= -10V, I

= -2.9A

 Max r

DS(on)

=135mΩ at V

= -4.5V, I

= -2.5A

 RoHS Compliant

General Description

These P-channel logic level specified MOSFETs are produced

using Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for superior

switching performance.

These devices are well suited for portable electronics

applications: load switching and power management, battery

charging and protection circuits.

Applications

 Load Switch

 Power Management

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) -2.9

-Pulsed -12

Single Pulse Avalanche Energy (Note 3) 54 mJ

Power Dissipation for Dual Operation 2

WPower Dissipation (Note 1a) 1.6

Power Dissipation (Note 1b) 0.9

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 40

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

Device Marking Device Package Reel Size Tape Width Quantity

FDS9958 FDS9958 SO-8 330mm 12mm 2500units

Pin 1

SO-8

Summary of content (6 pages)

PAGE 1
FDS9958 tm ® Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features General Description Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -60 ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V -52 VDS = -48V, VGS = 0V mV/°C -1 TJ = 125°C -100 VGS = ±20V, VDS = 0V µA ±100 nA -3.
PAGE 3
VGS = - 4V VGS = -10V 10 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 VGS = -3.5V VGS = -5V 8 VGS = - 4.5V 6 VGS = -3V 4 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 2 2.5 VGS = -3V 2.0 VGS = -3.5V VGS = -4V 1.5 0 1 2 3 0 4 2 4 6 8 10 12 -ID, DRAIN CURRENT(A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 240 1.8 ID = -2.9A ID = -2.9A VGS = -10V 1.
PAGE 4
2000 ID = -2.9A 1000 8 VDD = -20V Ciss CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = -30V 4 VDD = -40V 100 Coss Crss 2 f = 1MHz VGS = 0V 10 0.1 0 0 5 10 15 20 4 60 -ID, DRAIN CURRENT (A) 3.0 3 TJ = 25oC 2 TJ = 125oC 2.5 2.0 VGS = -4.5V VGS = -10V 1.5 1.0 o RθJA = 78 C/W 0.5 1 0.01 0.1 1 10 0.0 25 100 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.01 0.005 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 5 www.fairchildsemi.
PAGE 6
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