Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDT3612, MOSFET

2012 Fairchild Semiconductor Corporation

FDT3612 Rev. C2 (W)

FDT3612

100V N-Channel PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

DS(ON)

specifications. The result is a MOSFET that is

easy and safer to drive (even at very high frequencies),

and DC/DC power supply designs with higher overall

efficiency.

Applications

• DC/DC converter

• Motor driving

Features

• 3.7 A, 100 V. R

DS(ON)

= 120 mΩ @ V

= 10 V

DS(ON)

= 130 mΩ @ V

= 6 V

• Fast switching speed

• Low gate charge (14nC typ)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability in a

widely used surface mount package

SOT-223

(J23Z)

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 100 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 3.7 A

– Pulsed 20

Maximum Power Dissipation (Note 1a) 3.0

(Note 1b)

1.3

(Note 1c)

1.1

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 42

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 12

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

3612 FDT3612 13’’ 12mm 2500 units

FDT3612

February 2012

Summary of content (5 pages)

PAGE 1
FDT3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 50 V, ID= 3.7 A 90 mJ 3.
PAGE 3
FDT3612 Typical Characteristics 1.8 5.0V ID, DRAIN CURRENT (A) VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 4.5V 16 12 4.0V 8 4 3.5V 1.6 VGS = 4.0V 1.4 4.5V 5.0V 6.0V 1.2 0.8 0 0 2 4 6 0 8 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 2.2 ID = 3.
PAGE 4
FDT3612 Typical Characteristics 800 ID = 3.7A CISS 8 60V 80V 6 f = 1MHz VGS = 0 V 700 VDS = 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 4 600 500 400 300 200 CRSS 2 COSS 100 0 0 0 2 4 6 8 10 12 14 0 16 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
PAGE 5
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.