Datasheet

1
www.fairchildsemi.com
©2009 Fairchild Sem
iconductor Corporation
FDT3N40 Rev. C0
FDT3N40 N-Channel UniFET
TM
MOSFET
FDT3N40
N-Channel UniFET
TM
MOSFET
400 V, 2.0 A, 3.4
•
R
DS(on)
= 3.4 Ω (Max.) @ V
GS
= 10 V, I
D
= 1.0 A
•
Low Gate Charge (Typ. 4.5 nC)
•
Low Crss (Typ. 3.7 pF)
•
100% Avalanche Tested
Description
UniFET
TM
MOSFET is Fairchild Semiconductor
®
’s high v
oltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Absolute Maximum Ratings
Thermal Characteristics
SOT-223
G
D
S
Symbol Parameter FDT3N40 Unit
V
DSS
Drain-Source Voltage 400 V
I
D
Drain Current - Continuous (T
C
= 25C)
- Continuous (T
C
= 100C)
2.0
*
1.2
*
A
A
I
DM
Drain Current - Pulsed
(Note 1)
8.0
*
A
V
GSS
Gate-Source voltage 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
46 mJ
I
AR
Avalanche Current (Note 1) 2A
E
AR
Repetitive Avalanche Energy (Note 1) 0.2 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25C)
- Derate above 25C
2
0.02
W
W/C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 C
Symbol Parameter
FDT3N40
Unit
R
JA
*
Thermal Resistance, Case-to-Sink Typ.
60
C/W
* Drain current limited by maximum junction temperature
* Surface Mounted on JESD51-3 Board, T<0.1sec.
Features
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
April 2013
Applications