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FDT434P

P-Channel 2.5V Specified PowerTrench







MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor’s advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

Applications

• Low Dropout Regulator

• DC/DC converter

• Load switch

• Motor driving

Features

• –5.5 A, –20 V. R

DS(ON)

= 0.050 Ω @ V

= –4.5 V

DS(ON)

= 0.070 Ω @ V

= –2.5 V.

• Low gate charge (13nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability in a

widely used surface mount package.

SOT-223

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –20 V

GSS

Gate-Source Voltage

±8

Drain Current – Continuous (Note 1a) –6 A

– Pulsed –30

Power Dissipation for Single Operation (Note 1a) 3

(Note 1b)

1.3

(Note 1c)

1.1

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 42

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 12

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

434 FDT434P 13’’ 12mm 2500 units

FDT434P

April 2011

www.fairchildsemi.com

FDT434P Rev. C2

Summary of content (5 pages)

PAGE 1
FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –28 mV/°C Off Characteristics –20 V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse VGS = 8 V, VDS = 0 V 100 nA VGS = –8 V VDS = 0 V –100 nA IGSSR On Charact
PAGE 3
FDT434P Typical Characteristics 1.8 -3.0V -2.5V 16 RDS(ON) , NORMALIZED -ID, DRAIN CURRENT (A) VGS = -4.5V 12 8 -2.0V 4 -1.5 V DRAIN-SOURCE ON-RESISTANCE 20 0 0 1 2 3 4 1.6 -3.0V 1.2 -3.5V -4.0V 0 5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 R DS(ON) DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 20 0.15 ID = - 6 A VGS = - 4.5V 0.
PAGE 4
FDT434P Typical Characteristics 1800 I D = -6.0A -V f = 1MHz VGS = 0 V 1600 V DS= -5V -10V -15V 1400 CAPACITANCE (pF) 4 3 2 CISS 1200 1000 800 600 COSS 400 1 CRSS 200 GS , GATE-SOURCE VOLTAGE (V) 5 0 0 0 3 6 9 Q g , GATE CHARGE (nC) 12 15 0 2 4 6 8 10 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 200 SINGLE PULSE 100 µs 10 o 10ms R DS(ON) LIMIT 1s T A = 25 oC 100ms 10s DC 1 V GS= -4.5V SINGLE PULSE 0.
PAGE 5
FDT434P TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.