Datasheet

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FDT439N

FDT439N, Rev. C

FDT439N

N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description

This N-Channel Enhancement mode field effect transistor

is produced using Fairchild Semiconductor's proprietary,

high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-

state resistance, and provide superior switching

performance. These products are well suited to low

voltage, low current applications such as notebook

computer power management, battery powered

circuits, and DC motor control.

Applications

 DC/DC converter

 Load switch

 Motor driving

June 1999

Features

 6.3 A, 30 V. R

DS(on)

= 0.045 Ω @ V

= 4.5 V

DS(on)

= 0.058 Ω @ V

= 2.5 V

 Fast switching speed.

 High power and current handling capabitlity in a

widely used surface mount package.

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter FDT439N Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

Drain Current - Continuous

(Note 1a)

6.3 A

- Pulsed 20

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.3

(Note 1c)

1.1

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDT439N FDT439N 13’’ 12mm 2500 units

SOT-223

(J23Z)

Summary of content (5 pages)

PAGE 1
FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA 1 V On Characteristics 30 V 4
PAGE 3
FDT439N Typical Characteristics 2 VGS = 4.5V 2.5V 3.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 20 2.0V 12 8 1.5V 4 1.8 1.6 VGS = 2.0V 1.4 2.5V 1.2 3.0V 3.5V 4.5V 1 0.8 0 0 1 2 3 0 4 4 8 Figure 1. On-Region Characteristics. 20 0.14 ID = 6.3A VGS = 4.5V 1.5 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 16 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.3 1.2 1.1 1 0.9 0.8 0.
PAGE 4
(continued) 1500 5 ID = 6.3A VDS = 5V f = 1MHz VGS = 0 V 10V 4 1200 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDT439N Typical Characteristics 3 2 900 600 CISS 1 300 0 0 0 2 4 6 8 10 COSS CRSS 0 12 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 200 o 100µs RθJA = 110 C/W 160 o TA = 25 C 1ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE 0.
PAGE 5
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