Datasheet
June 2001
2001 Fairchild Semiconductor Corporation FDT458P Rev. B(W)
FDT458P
30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
Applications
• Battery chargers
• Motor drives
Features
• 3.4 A, –30 V. R
DS(ON)
= 130 mΩ @ V
GS
= 10 V
R
DS(ON)
= 200 mΩ @ V
GS
= 4.5 V
• Fast switching speed
• Low gate charge (2.5 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability in a
widely used surface mount package
G
D
S
D
SOT-223
SG D
D
G
D
S
SOT-223*
(J23Z)
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage – 30 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current – Continuous (Note 1a) 3.4 A
– Pulsed 10
Maximum Power Dissipation (Note 1a) 3.0
(Note 1b)
1.3
P
D
(Note 1c)
1.1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
458P FDT458P 13’’ 12mm 2500 units
FDT458P