Datasheet

March 1998
FDT459N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings T
A
= 25
o
C unless otherwise noted
Symbol Parameter FDT459N Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage - Continuous ±20 V
I
D
Maximum Drain Current - Continuous (Note 1a) 6.5 A
- Pulsed 20
P
D
Maximum Power Dissipation (Note 1a) 3 W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
FDT459NRev.C
6.5 A, 30 V. R
DS(ON)
= 0.035Ω @ V
GS
= 10 V
R
DS(ON)
= 0.055 Ω @ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
SOIC-16
SuperSOT
TM
-3
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
D
D S
G
D
S
G
© 1998 Fairchild Semiconductor Corporation