Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDT86102LZ, MOSFET

November 2010

FDT86102LZ N-Channel PowerTrench

MOSFET

FDT86102LZ Rev. C

FDT86102LZ

N-Channel PowerTrench

MOSFET

100 V, 6.6 A, 28 mΩ

Features

 Max r

DS(on)

= 28 mΩ at V

= 10 V, I

= 6.6 A

 Max r

DS(on)

= 38 mΩ at V

= 4.5 V, I

= 5.5 A

 HBM ESD protection level > 6 kV typical (Note 4)

 Very low Qg and Qgd compared to competing trench

technologies

 Fast switching speed

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that has

been especially tailored to minimize the on-state resistance and

switching loss. G-S zener has been added to enhance ESD

voltage level.

Applications

 DC-DC conversion

 Inverter

 Synchronous Rectifier

SOT-223

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 6.6

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 84 mJ

Power Dissipation T

= 25 °C (Note 1a) 2.2

Power Dissipation T

= 25 °C (Note 1b) 1.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 12

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 55

Device Marking Device Package Reel Size Tape Width Quantity

86102LZ FDT86102LZ SOT-223 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features General Description Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 3.
PAGE 3
5 VGS = 10 V VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 3.5 V 30 VGS = 3 V 20 10 VGS = 2.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 2.5 V 4 VGS = 3 V 3 VGS = 3.5 V 2 1 0 5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 150 ID = 6.6 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2.
PAGE 4
2000 ID = 6.6 A 1000 VDD = 25 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 4 VDD = 75 V 100 Coss 10 2 Crss f = 1 MHz VGS = 0 V 0 0 3 6 9 12 15 1 0.1 18 1 Figure 7. Gate Charge Characteristics 15 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 12 VGS = 10 V 9 Package Limited VGS = 4.
PAGE 5
2000 P(PK), PEAK TRANSIENT POWER (W) 1000 100 10 SINGLE PULSE o RθJA = 118 C/W o TA = 25 C 1 0.5 -4 10 -3 -2 10 -1 10 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 118 C/W 0.001 0.
PAGE 6
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.