Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDT86113LZ, MOSFET

FDT86113LZ N-Channel PowerTrench

MOSFET

FDT86113LZ Rev.C

www.fairchildsemi.com

March 2011

FDT86113LZ

N-Channel PowerTrench

MOSFET

100 V, 3.3 A, 100 m:

Features

 Max r

DS(on)

= 100 m: at V

= 10 V, I

= 3.3 A

 Max r

DS(on)

= 145 m: at V

= 4.5 V, I

= 2.7 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 HBM ESD protection level > 3 KV typical (Note 4)

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel logic Level MOSFETs are produced using

Fairchild Semiconductor‘s advanced Power Trench

process

that has been special tailored to minimize the on-state resistance

and yet maintain superior switching performance. G-S zener

has been added to enhance ESD voltage level.

Application

 DC - DC Switch

SOT-223

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous 3.3

-Pulsed 12

Single Pulse Avalanche Energy (Note 3) 9 mJ

Power Dissipation T

= 25 °C (Note 1a) 2.2

Power Dissipation T

= 25 °C (Note 1b) 1.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case 12

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 55

Device Marking Device Package Reel Size Tape Width Quantity

86113LZ FDT86113LZ SOT-223 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m: Features General Description Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 PA 2.
PAGE 3
5 VGS = 10 V VGS = 4.5 V VGS = 4 V 9 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 3.5 V 6 VGS = 3 V 3 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 1 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 5 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 500 ID = 3.3 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 Figure 2.
PAGE 4
00 ID = 3.3 A Ciss 8 100 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 25 V VDD = 75 V 4 Coss 10 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -1 10 7 6 5 TJ = 25 oC 4 TJ = 100 oC 3 TJ -2 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) Crss 1 0.
PAGE 5
P(PK), PEAK TRANSIENT POWER (W) 300 100 10 SINGLE PULSE o RTJA = 118 C/W 1 o TA = 25 C 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 118 C/W 0.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.