Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDT86244, MOSFET

May 2011

FDT86244 Rev.C

www.fairchildsemi.com

FDT86244 N-Channel PowerTrench

MOSFET

FDT86244

N-Channel Power Trench

MOSFET

150 V, 2.8 A, 128 mΩ

Features

 Max r

DS(on)

= 128 mΩ at V

= 10 V, I

= 2.8 A

 Max r

DS(on)

= 178 mΩ at V

= 6 V, I

= 2.4 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 Fast switching speed

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for r

DS(on)

, switching performance and

ruggedness.

Applications

 Load Switch

 Primary Switch

SOT-223

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 2.8

-Pulsed 12

Single Pulse Avalanche Energy (Note 3) 12 mJ

Power Dissipation T

= 25 °C (Note 1a) 2.2

Power Dissipation T

= 25 °C (Note 1b) 1.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 12

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 55

Device Marking Device Package Reel Size Tape Width Quantity

86244 FDT86244 SOT-223 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDT86244 N-Channel Power Trench® MOSFET 150 V, 2.8 A, 128 mΩ Features General Description Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.
PAGE 3
12 VGS = 6 V VGS = 10 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 9 VGS = 5.5 V 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V VGS = 5.5 V 3 VGS = 6 V 2 1 0 5 0 3 Figure 1. On Region Characteristics 9 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 500 ID = 2.8 A VGS = 10 V 2.2 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 SOURCE ON-RESISTANCE (mΩ) 2.
PAGE 4
1000 ID = 2.8 A VDD = 50 V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 100 Coss 10 2 f = 1 MHz VGS = 0 V 0 0 1 2 3 4 5 1 8 6 6 5 = 25 oC TJ = 100 oC 2 TJ = 125 oC VGS = 10 V 4 VGS = 6 V 3 2 o RθJC = 12 C/W 1 1 0.01 0.1 0 25 1 50 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature Figure 9. Unclamped Inductive Switching Capability 500 P(PK), PEAK TRANSIENT POWER (W) 20 10 100 us 1 1 ms 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 118 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDT86244 Rev.C 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.