Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDT86246, MOSFET

December 2010

FDT86246 N-Channel Power Trench

MOSFET

FDT86246 Rev.C

FDT86246

N-Channel Power Trench

MOSFET

150 V, 2 A, 236 mΩ

Features

 Max r

DS(on)

= 236 mΩ at V

= 10 V, I

= 2 A

 Max r

DS(on)

= 329 mΩ at V

= 6 V, I

= 1.7 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 Fast switching speed

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for

DS(on)

, switching performance and

ruggedness.

Applications

 Load Switch

 Primary Switch

SOT-223

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 2

-Pulsed 8

Single Pulse Avalanche Energy (Note 3) 8 mJ

Power Dissipation (Note 1a) 2.2

Power Dissipation (Note 1b) 1.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 12

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 55

Device Marking Device Package Reel Size Tape Width Quantity

86246 FDT86246 SOT-223 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.
PAGE 3
8 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 7 V ID, DRAIN CURRENT (A) 3.0 VGS = 10 V VGS = 6 V VGS = 5.5 V 4 VGS = 5 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5 V 2.5 VGS = 5.5 V 2.0 VGS = 6 V 1.5 1.0 0.5 5 0 2 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.6 1.2 0.8 SOURCE ON-RESISTANCE (mΩ) 2.0 ID = 2 A PULSE DURATION = 80 μs DUTY CYCLE = 0.
PAGE 4
500 ID = 2 A Ciss VDD = 50 V 8 VDD = 75 V 6 100 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 100 V 4 Coss 10 Crss 2 f = 1 MHz VGS = 0 V 0 0.0 0.5 1.0 1.5 2.0 2.5 1 0.1 3.0 1 Figure 7. Gate Charge Characteristics 100 Figure 8.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 118 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C 5 www.fairchildsemi.
PAGE 6
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.