Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDT86256, MOSFET

August 2011

FDT86256 N-Channel PowerTrench

MOSFET

FDT86256 Rev. C

FDT86256

N-Channel PowerTrench

MOSFET

150 V, 1.2 A, 845 mΩ

Features

 Max r

DS(on)

= 845 mΩ at V

= 10 V, I

= 1.2 A

 Max r

DS(on)

= 1280 mΩ at V

= 6.0 V, I

= 1.0 A

 Very low Qg and Qgd compared to competing trench

technologies

 Fast switching speed

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that has

been especially tailored to minimize the on-state resistance and

switching loss. G-S zener has been added to enhance ESD

voltage level.

Applications

 DC-DC conversion

 Inverter

 Synchronous Rectifier

SOT-223

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 3

-Continuous (Silicon limited) T

= 25 °C 2.5

-Continuous T

= 25 °C (Note 1a) 1.2

-Pulsed 2

Single Pulse Avalanche Energy (Note 3) 1 mJ

Power Dissipation T

= 25 °C 10

Power Dissipation T

= 25 °C (Note 1a) 2.3

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 12

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 55

Device Marking Device Package Reel Size Tape Width Quantity

86256 FDT86256 SOT-223 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features General Description Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 4 V 150 V 100 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Sourc
PAGE 3
.0 VGS = 7 V 2.0 VGS = 6 V 1.5 VGS = 5.5 V 1.0 0.5 0.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1 2 3 VGS = 5.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 8 V 2.5 ID, DRAIN CURRENT (A) 4 VGS = 10 V 4 VGS = 6 V 3 VGS = 7 V 2 VGS = 8 V 1 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 5 0.5 1.0 1.5 2.0 2.5 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.5 1.2 0.9 0.6 0.
PAGE 4
100 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 1.2 A Ciss VDD = 75 V VDD = 65 V 6 CAPACITANCE (pF) 8 VDD = 85 V 4 Coss 10 Crss 2 f = 1 MHz VGS = 0 V 1 0 0.0 0.3 0.6 0.9 0.5 0.1 1.2 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 1.8 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJA = 55 C/W 1.6 1 TJ = 25 oC TJ = 100 oC 0.1 TJ = 125 oC 1.4 1.2 1.0 VGS = 10 V 0.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 o RθJA = 118 C/W 0.01 -4 10 -3 10 -2 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 10 1 10 100 1000 t RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. C 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.