Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDV305N, MOSFET

January 2003

2003 Fairchild Semiconductor Corporation

FDV305N Rev D (W)

FDV305N

20V N-Channel PowerTrench



MOSFET

General Description

This 20V N-Channel MOSFET uses Fairchild’s high

voltage PowerTrench process. It has been optimized for

power management applications.

Applications

• Load switch

• Battery protection

• Power management

Features

• 0.9 A, 20 V R

DS(ON)

= 220 mΩ @ V

= 4.5 V

DS(ON)

= 300 mΩ @ V

= 2.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

SOT-23

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

± 12

Drain Current – Continuous 0.9 A

– Pulsed 2

Maximum Power Dissipation 0.35

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

357

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

305 FDV305N 7’’ 8mm 3000 units

FDV305N

Summary of content (5 pages)

PAGE 1
FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge • Load switch • Fast switching speed • Battery protection • Power management RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA 20 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA 1.
PAGE 3
FDV305N Typical Characteristics 1.8 VGS = 4.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 ID, DRAIN CURRENT (A) 3.0V 1.5 1 2.0V 0.5 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.5V 0.8 0 0 0.5 1 1.5 0 2 0.5 Figure 1. On-Region Characteristics. 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.6 ID = 0.9A VGS = 4.
PAGE 4
FDV305N Typical Characteristics 150 VDS = 5V ID = 0.9A 10V 120 15V 3 2 90 60 COSS 1 30 0 0 CRSS 0 0.5 1 1.5 0 5 Qg, GATE CHARGE (nC) 15 P(pk), PEAK TRANSIENT POWER (W) 5 RDS(ON) LIMIT 100µs 1ms 1 10ms 100ms 1s DC VGS = 4.5V SINGLE PULSE o RθJA = 357 C/W 0.1 o TA = 25 C 0.01 0.1 1 20 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics.
PAGE 5
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