Datasheet

October 2008
FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDY1002PZ Rev.B1
www.fairchildsemi.com
1
FDY1002PZ
Dual P-Channel (–1.5 V) Specified PowerTrench
®
MOSFET
–20 V, –0.83 A, 0.5 Ω
Features
 Max r
DS(on)
= 0.5 Ω at V
GS
= –4.5 V, I
D
= –0.83 A
 Max r
DS(on)
= 0.7 Ω at V
GS
= –2.5 V, I
D
= –0.70 A
 Max r
DS(on)
= 1.2 Ω at V
GS
= –1.8 V, I
D
= –0.43 A
 Max r
DS(on)
= 1.8 Ω at V
GS
= –1.5 V, I
D
= –0.36 A
 HBM ESD protection level = 1400 V (Note 3)
 RoHS Compliant
General Description
This Dual P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the
r
DS(on)
@V
GS
= –1.5 V.
Application
 Li-Ion Battery Pack
1
2
S
1
3
2
1
4
5
6
G
1
D
2
D
1
G
2
S
2
6
5
4
SC89-6
3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage –20 V
V
GS
Gate to Source Voltage ±8 V
I
D
Drain Current -Continuous (Note 1a) –0.83
A
-Pulsed –1.0
P
D
Power Dissipation (Note 1a) 0.625
W
Power Dissipation (Note 1b) 0.446
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 200
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 280
Device Marking Device Package Reel Size Tape Width Quantity
G FDY1002PZ SC89-6 7 ” 8 mm 3000 units