Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDY100PZ, MOSFET

January 2006

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDY100PZ Rev A

FDY100PZ

Single P-Channel (– 2.5V) Specified PowerTrench







MOSFET

General Description

This Single P-Channel MOSFET has been designed

using Fairchild Semiconductor’s advanced Power

Trench process to optimize the R

DS(ON)

@ V

= – 2.5v.

Applications

• Li-Ion Battery Pack

Features

• – 350 mA, – 20 V R

DS(ON)

= 1.2 Ω

@ V

= – 4.5 V

DS(ON)

= 1.6 Ω @ V

= – 2.5 V

• ESD protection diode (note 3)

• RoHS Compliant

Absolute Maximum Ratings

=25

C unless otherwise noted

Symbol

Parameter Ratings Unit

DSS

Drain-Source Voltage – 20 V

GSS

Gate-Source Voltage

± 8

Drain Current – Continuous

(Note 1a) 1a)

– 350 I

– Pulsed – 1000

Power Dissipation (Steady State)

(Note 1a) 1a)

625 P

(Note 1b) 1b)

446

, T

STG

Operating and Storage Junction Temperature

Range

–55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 1a)

200

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1b) 1b)

280

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

A FDY100PZ 7’’ 8mm 3000 units

FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench



MOSFET

Summary of content (6 pages)

PAGE 1
FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min ID = – 250 µA – 20 Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, 15 ID = – 250 µA, Referenced to 25°C VDS = – 16 V, VGS = ± 8 V, V VGS = 0 V VDS = 0 V mV/°C –3 ± 10 µA µA –1.0 –3 – 1.5 V mV/°C VGS = – 4.5 V, ID = – 350 mA VGS = – 2.
PAGE 3
1 2.6 0.8 -2.5V V -4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS= -4.5V -3.0V 0.6 -2.0V 0.4 -1.8V 0.2 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -2.0V 1.8 -2.5V 1.4 -3.0V -3.5V 1 0 2 Figure 1. On-Region Characteristics. -4.0V -4.5V 0.2 0.4 0.6 -ID, DRAIN CURRENT (A) 0.8 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 2 ID = -0.35A VGS = -4.5V ID = -0.
PAGE 4
10 150 -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.35A f = 1 MHz VGS = 0 V 125 8 CAPACITANCE (pF) VDS = -5V -15V 6 -10V 4 100 2 Ciss 75 Coss 50 25 Crss 0 0 0 0.5 1 1.5 Qg, GATE CHARGE (nC) 2 2.5 0 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 12 10 100µs RDS(ON) LIMIT 0.1 10s DC VGS = -4.5V SINGLE PULSE RθJA = 280oC/W 1ms 10ms 100ms 1s TA = 25oC 0.01 0.01 0.
PAGE 5
1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.80 1.14 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY100PZ Rev A www.fairchildsemi.com FDY100PZ Single P-Channel (– 2.
PAGE 6
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