Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDY101PZ, MOSFET

January 2006

www.fairchildsemi.com

FDY101PZ Rev A

FDY101PZ

Single P-Channel (– 2.5V) Specified PowerTrench

MOSFET

General Description

This Single P-Channel MOSFET has been designed

using Fairchild Semiconductor’s advanced Power

Trench process to optimize the R

DS(ON)

@ V

= – 2.5v.

Applications

• Li-Ion Battery Pack

Features

• – 150 mA, – 20 V R

DS(ON)

= 8 Ω @ V

= – 4.5 V

DS(ON)

= 12 Ω @ V

= – 2.5 V

• ESD protection diode (note 3)

• RoHS Compliant

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage – 20 V

GSS

Gate-Source Voltage

± 8

Drain Current – Continuous (Note 1a) – 150 mA I

– Pulsed – 1000

Power Dissipation (Steady State) (Note 1a) 625 mW P

(Note 1b)

446

, T

STG

Operating and Storage Junction Temperature

Range

–55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 200

°C/W

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1b) 280

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

B FDY101PZ 7’’ 8 mm 3000 units

FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench

MOSFET

1 S

Summary of content (6 pages)

PAGE 1
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V Applications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS Compliant RDS(ON) = 12 Ω @ VGS = – 2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics ID = – 250 µA VGS = 0 V, – 20 ID = – 250 µA, Referenced to 25°C VDS = – 16 V, VGS = ± 8 V, V 15 VGS = 0 V VDS = 0 V mV/°C –3 ± 10 µA µA – 1.
PAGE 3
1 5 -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS= -4.5V 0.8 -3.5V -3.0V 0.6 -2.0V 0.4 -1.8V 0.2 -1.5V 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -1.8V 3 2 -2.0V -2.5V -3.0V 1 0 2 Figure 1. On-Region Characteristics. -3.5V -4.5V 0.2 0.4 0.6 -ID, DRAIN CURRENT (A) 0.8 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 2 ID = -0.15A VGS = -4.5V ID = -0.
PAGE 4
10 150 f = 1 MHz VGS = 0 V -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.15A 125 8 CAPACITANCE (pF) VDS = -5V -15V 6 -10V 4 2 100 Ciss 75 50 Coss 25 Crss 0 0 0 0.5 1 1.5 Qg, GATE CHARGE (nC) 2 0 2.5 Figure 7. Gate Charge Characteristics. 20 10 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 10 100µs 1 RDS(ON) LIMIT 0.1 1ms 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RθJA = 280oC/W TA = 25oC 0.
PAGE 5
1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.80 1.14 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY101PZ Rev A www.fairchildsemi.com FDY101PZ Single P-Channel (– 2.
PAGE 6
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