Datasheet

January 2006
2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDY2000PZ Rev A
FDY2000PZ
Dual P-Channel (– 2.5V) Specified PowerTrench
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
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MOSFET
General Description
This Dual P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
DS(ON)
@ V
GS
= – 2.5v.
Applications
• Li-Ion Battery Pack
Features
• – 350 mA, – 20 V R
DS(ON)
= 1.2 Ω @ V
GS
= – 4.5 V
R
DS(ON)
= 1.6 Ω @ V
GS
= – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Unit
s
V
DSS
Drain-Source Voltage – 20 V
V
GSS
Gate-Source Voltage
± 8
V
Drain Current – Continuous (Note 1a)
1a)
– 350 I
D
– Pulsed – 1000
mA
Power Dissipation (Steady State) (Note 1a)
1a)
625 P
D
(Note 1b)
1
446
mW
T
J
, T
STG
Operating and Storage Junction Temperature
Range
–55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
1a)
200
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
1
280
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
A FDY2000PZ 7 ’’ 8 mm 3000 units
FDY2000PZ Dual P-Channel (– 2.5V) Specified PowerTrench
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MOSFET
1
3
5
2
4
6
S
1
D
1
G
2
S
2
D
2
G
1
4
6
5
3
1
2