Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDY3000NZ, MOSFET

January 2007

2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDY3000NZ Rev B

FDY3000NZ

Dual N-Channel 2.5V Specified PowerTrench



MOSFET

General Description

This Dual N-Channel MOSFET has been designed

using Fairchild Semiconductor’s advanced Power

Trench process to optimize the R

DS(ON)

@ V

= 2.5v.

Applications

x Li-Ion Battery Pack

Features

x 600 mA, 20 V R

DS(ON)

= 700 m:

@ V

= 4.5 V

DS(ON)

= 850 m: @ V

= 2.5 V

x ESD protection diode (note 3)

x RoHS Compliant

Absolute Maxim um Ratings T

=25

C unless otherwise noted

Sym bol Param eter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

r 12

Drain Current – Continuous (Note 1a) 600 mA

– Pulsed 1000

Power Dissipation (Steady State) (Note 1a) 625 mW

(Note 1b)

446

, T

STG

Operating and Storage Junction Temperature

Range

–55 to +150

Therm al Characteristics

TJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 200

qC/W

TJA

Thermal Resistance, Junction-to-Ambient

(Note 1b) 280

Package Marking and Ordering Inform ation

Device Marking Device Reel Size Tape width Quantity

C FDY3000NZ 7 ’’ 8 mm 3000 units

FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench



MOSFET

January 2007

Summary of content (6 pages)

PAGE 1
January 2007 FDY3000NZ tm DualN-Channel2.5V Specified PowerTrench MOSFET GeneralDescription Features Thi s Dual N-Channel MOSFET has been desi gned usi ng Fai rchi l d Semi conductor’ s advanced Power Trench process to opti mi ze the RDS(ON)@ VGS = 2.5v. x 600 mA,20 V RDS(ON)= 700 m: @ VGS = 4.5 V Applications x ESD protecti on di ode (note 3) x Li -Ion Battery Pack x RoHS Compl i ant RDS(ON)= 850 m: @ VGS = 2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, ID = 250 PA 20 V 14 ID = 250 PA, Referenced to 25qC VDS = 16 V, VGS = 0 V VGS = r 12 V, VDS = 0 V VGS = r 4.5 V, VDS = 0 V mV/qC 1 r 10 r1 PA PA PA 1.0 –3 1.3 V mV/qC 0.25 0.37 0.73 0.35 1.8 0.70 0.85 1.
PAGE 3
1 2.6 3.0V 2.5V RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V ID,DRAIN CURRENT (A) 3.5V 0.8 2.0V 0.6 0.4 0.2 2.4 VGS = 2.0V 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.5V 1 0.8 0 0 0.25 0.5 0.75 0 1 0.2 0.4 Figure 1. On-Region Characteristics. 1 1 ID = 600mA VGS = 4.5V ID = 300mA RDS(ON),ON-RESISTANCE (OHM) RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.
PAGE 4
100 ID = 600mA f = 1MHz VGS = 0 V 90 4 80 VDS = 5V 10V 3 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 15V 2 1 Ciss 70 60 50 40 Coss 30 20 10 0 Crss 0 0 0.2 0.4 0.6 0.8 1 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 16 20 30 1ms 1s 10ms 100ms 10s DC VGS = 4.5V SINGLE PULSE RTJA = 280oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RTJA = 280°C/W TA = 25°C 25 20 15 10 5 0 0.0001 0.001 0.01 0.
PAGE 5
1.70 1.50 0.50 0.30 0.15 6 0.50 4 1.70 1.55 1.20 BSC 1 1.25 1.80 3 (0.20) 0.30 0.50 0.55 LAND PATTERN RECOMMENDATION 1.00 0.60 0.56 0.18 0.10 SEE DETAIL A 0.35 BSC 0.20 BSC DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY3000NZ Rev B www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.
PAGE 6
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