Datasheet

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FDY302NZ Rev B

FDY302NZ

Single N-Channel 2.5V Specified PowerTrench

®®

MOSFET

General Description

This Single N-Channel MOSFET has been designed

using Fairchild Semiconductor’s advanced Power

Trench process to optimize the R

DS(ON)

=2.5V.

Applications

• Li-Ion Battery Pack

Features

• 600 mA, 20 V R

DS(ON)

= 300 mΩ

@ V

= 4.5 V

DS(ON)

=500 mΩ @ V

= 2.5 V

• ESD protection diode (note 3)

• RoHS Compliant

Absolute Maximum Ratings

=25

C unless otherwise noted

Symbol Parameter Ratings Unit

Drain-Source Voltage 20 V

Gate-Source Voltage

± 12

Drain Current – Continuous

(Note 1a)

600 mA

–Pulsed 1000

Power Dissipation (Steady State)

(Note 1a)

625 mW

(Note 1b)

446

STG

Operating and Storage Junction Temperature

Range

–55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

200

°C/W

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

280

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDY302NZ 7 ’’ 8 mm 3000 units

FDY302NZ Single N-Channel 2.5V Specified PowerTrench

MOSFET

JANUARY 2014

Summary of content (6 pages)

PAGE 1
FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V Applications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS Compliant RDS(ON) = 500 mΩ @ VGS = 2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, ID = 250 µA 20 ID = 250 µA, Referenced to 25°C V 15 mV/°C 1 ± 10 ±1 µA µA µA 1.0 3 1.5 V mV/°C 0.24 0.36 0.70 0.35 1.8 0.30 0.50 1.20 1.00 Ω VDS = 16 V, VGS = 0 V VGS = ± 12 V, VDS = 0 V VGS = ± 4.
PAGE 3
1 2.6 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 3.5V 2.5V 0.8 2.0V 0.6 0.4 0.2 2.4 VGS = 2.0V 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.5V 1 0.8 0 0 0.25 0.5 0.75 0 1 0.2 Figure 1. On-Region Characteristics. 0.8 1 0.9 ID = 600mA VGS = 4.5V ID = 300mA RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.
PAGE 4
100 ID = 600mA f = 1MHz VGS = 0 V 90 4 80 VDS = 5V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 10V 3 15V 2 1 Ciss 70 60 50 40 Coss 30 20 10 0 Crss 0 0 0.2 0.4 0.6 0.8 1 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 16 20 30 P(pk), PEAK TRANSIENT POWER (W) 1ms RDS(ON) LIMIT 1 1s 10ms 100ms 10s DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 280oC/W TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 280°C/W TA = 25°C 25 20 15 10 5 0 0.0001 0.001 0.01 0.
PAGE 5
1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.80 1.14 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY302NZ Rev B www.fairchildsemi.com FDY302NZ Single N-Channel 2.
PAGE 6
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