Datasheet

FDZ191P P-Channel 1.5V PowerTrench
®
WL-CSP MOSFET
©2009 Fairchild Semiconductor Corporation
FDZ191P Rev.F4 (W)
www.fairchildsemi.com
1
FDZ191P
P-Channel 1.5V PowerTrench
®
WL-CSP MOSFET
-20V, -1A, 85m:
Features
Max r
DS(on)
= 85m: at V
GS
= -4.5V, I
D
= -1A
Max r
DS(on)
= 123m: at V
GS
= -2.5V, I
D
= -1A
Max r
DS(on)
= 200m: at V
GS
= -1.5V, I
D
= -1A
Occupies only 1.5 mm
2
of PCB area Less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and r
DS(on)
. This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low r
DS(on)
.
Application
Battery management
Load switch
Battery protection
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8 V
I
D
Drain Current -Continuous (Note 1a) -3
A
-Pulsed -15
P
D
Power Dissipation (Note 1a) 1.9
W
Power Dissipation (Note 1b) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 65
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1b) 133
Device Marking Device Package Reel Size Tape Width Quantity
1 FDZ191P WL-CSP 7’’ 8mm 5000 units
PIN 1
D
S
S
D
S
G
BOTTOM
TOP
PIN 1
S
D
G
2014
ly
Ju

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