Datasheet

April 2010
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
www.fairchildsemi.com
1
FDZ375P P-Channel 1.5 V Specified PowerTrench
®
Thin
WL-CSP MOSFET
FDZ375P
P-Channel 1.5 V Specified PowerTrench
®
Thin WL-CSP MOSFET
-20 V, -3.7 A, 78 mΩ
Features
 Max r
DS(on)
= 78 mΩ at V
GS
= -4.5 V, I
D
= -2.0 A
 Max r
DS(on)
= 92 mΩ at V
GS
= -2.5 V, I
D
= -1.5 A
 Max r
DS(on)
= 112 mΩ at V
GS
= -1.8 V, I
D
= -1.0 A
 Max r
DS(on)
= 150 mΩ at V
GS
= -1.5 V, I
D
= -1.0 A
 Occupies only 1.0 mm
2
of PCB area. Less than 30% of the
area of 2 x 2 BGA
 Ultra-thin package: less than 0.4 mm height when mounted to
PCB
 RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench
®
process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ375P minimizes both PCB space and r
DS(on)
. This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
DS(on)
.
Applications
 Battery management
 Load switch
 Battery protection
BOTTOM
TOP
D
S
S
G
Pin 1
WL-CSP 1.0X1.0 Thin
Pin 1
S
G
D
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8 V
I
D
-Continuous T
A
= 25°C (Note 1a) -3.7
A
-Pulsed -12
P
D
Power Dissipation T
A
= 25°C (Note 1a) 1.7
W
Power Dissipation T
A
= 25°C (Note 1b) 0.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 75
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 260
Device Marking Device Package Reel Size Tape Width Quantity
N FDZ375P WL-CSP 1.0X1.0 Thin 7 ” 8 mm 5000 units