Datasheet

July 2010
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
1
FDZ3N513ZT Integrated NMOS and Schottky Diode
FDZ3N513ZT
Integrated NMOS and Schottky Diode
Features
 Monolithic NMOS and Schottky Diode
 Ultra-small form factor 1mm x 1mm WLCSP
 Max r
DS(on)
= 462 mΩ at V
GS
= 4.5 V, I
D
= 0.3 A
 Max r
DS(on)
= 520 mΩ at V
GS
= 3.2 V, I
D
= 0.3 A
 HBM ESD protection level > 2000V (Note3)
 RoHS Compliant
General Description
The FDZ3N513ZT is a monolithic NMOS/ Schottky combination
(FETky) and is designed and wired to function as a discontinu-
ous conduction mode (DCM) boost LED power train for mobile
LED backlighting applications.
Application
 Boost Converter Power Train for single cell Li-ion LED
backlighting
Package Marking and Ordering Information
Part Number Device Marking Package Reel Size Tape Width Quantity
FDZ3N513ZT Z3 WL-CSP 1.0X1.0 7” 8mm 5000 units
WL-CSP 3D Bumps Facing Down View
WL-CSP 3D Bumps Facing Up View
S
D
K
G
Pin 1
WL-CSP 1.0X1.0 Bumps Facing Up View
Absolute Maximum Ratings
Thermal Characteristics
Symbol Parameter Ratings Units
V
DS
NMOS Drain to Source Voltage 30 V
V
GS
NMOS Gate to Source Voltage -0.3/5.5 V
P
D
Power Dissipation @ T
A
= 25°C (Note 1a) 1 W
I
D
Maximum Continuous NMOS Drain Current (Note 1a) 1.1 A
V
RRM
Schottky Repetitive Peak Reverse Voltage 25 V
I
O
Schottky Average Forward Current 0.3 A
T
J
, T
STG
Operating Junction and Storage Temperature -55/125 °C
ESD Electrostatic Discharge Protection CDM 2000 V
R
θJA
Thermal Resistance, Junction to Ambient - 1in
2
, 2oz. Copper (Note 1a) 100 °C/W
R
θJA
Thermal Resistance, Junction to Ambient - Minimum Pad (Note 1b) 260 °C/W