Datasheet

December 2011
©2011 Fairchild Semiconductor Corporation
FDZ663P Rev.C1
www.fairchildsemi.com
1
FDZ663P P-Channel 1.5 V Specified PowerTrench
®
Thin
WL-CSP MOSFET
FDZ663P
P-Channel 1.5 V Specified PowerTrench
®
Thin
WL-CSP MOSFET
-20 V, -2.7 A, 134 mΩ
Features
Max r
DS(on)
= 134 mΩ at V
GS
= -4.5 V, I
D
= -2 A
Max r
DS(on)
= 171 mΩ at V
GS
= -2.5 V, I
D
= -1.5 A
Max r
DS(on)
= 216 mΩ at V
GS
= -1.8 V, I
D
= -1 A
Max r
DS(on)
= 288 mΩ at V
GS
= -1.5 V, I
D
= -1 A
Occupies only 0.64 mm
2
of PCB area. Less than 16% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench
®
process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ663P minimizes both PCB space and r
DS(on)
. This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile (0.4
mm) and small (0.8x0.8 mm
2
) packaging, low gate charge, and
low r
DS(on)
.
Applications
Battery management
Load switch
Battery protection
BOTTOM
TOP
D
S
S
G
Pin 1
Pin 1
WL-CSP 0.8X0.8 Thin
S
G
D
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8 V
I
D
-Continuous T
A
= 25 °C (Note 1a) -2.7
A
-Pulsed -10
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 1.3
W
Power Dissipation T
A
= 25 °C (Note 1b) 0.4
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 93
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 311
Device Marking Device Package Reel Size Tape Width Quantity
EJ FDZ663P WL-CSP 0.8X0.8 Thin 7 ” 8 mm 5000 units

Summary of content (6 pages)