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FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

FOD3184 Rev. 1.0.4

February 2011

FOD3184

3A Output Current, High Speed MOSFET/IGBT

Gate Driver Optocoupler

Features

■

High noise immunity characterized by 50kV/µs (Typ.)

common mode rejection @ V

= 2,000V

■

Guaranteed operating temperature range of

-40°C to +100°C

■

3A peak output current for medium power

MOSFET/IGBT

■

Fast switching speed

– 210ns max. propagation delay

– 65ns max pulse width distortion

■

Fast output rise/fall time

– Offers lower dynamic power dissipation

■

250kHz maximum switching speed

■

Wide V

operating range from 15V to 30V

■

Use of P-Channel MOSFETs at output stage

enables output voltage swing close to the supply rail

(rail-to-rail output)

■

Under voltage lockout protection (UVLO) with

hysteresis – optimized for driving IGBTs

■

Safety and regulatory approvals

– UL1577, 5,000 VAC

RMS

for 1 min.

– DIN EN/IEC 60747-5-2, 1,414 peak working

insulation voltage

• Minimum creepage distance of 8.0mm

• Minimum clearance distance of 8mm to 16mm

(option TV or TSV)

• Minimum insulation thickness of 0.5mm

Applications

■

Plasma Display Panel

■

High performance DC/DC convertor

■

High performance switch mode power supply

■

High performance uninterruptible power supply

■

Isolated Power MOSFET/IGBT gate drive

Description

The FOD3184 is a 3A Output Current, High Speed

MOSFET/IGBT Gate Drive Optocoupler. It consists of a

aluminium gallium arsenide (AlGaAs) light emitting diode

optically coupled to a CMOS detector with PMOS and

NMOS output power transistors integrated circuit power

stage. It is ideally suited for high frequency driving of

power MOSFETS/IGBT used in Plasma Display Panels

(PDPs), motor control inverter applications and high

performance DC/DC converters.

The device is packaged in an 8-pin dual in-line housing

compatible with 260°C reflow processes for lead free

solder compliance.

Functional Block Diagram Package Outlines

ANODE

CATHODE

Note:

A 0.1µF bypass capacitor must be connected between pins 5 and 8.

Summary of content (23 pages)

PAGE 1
FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications ■ High noise immunity characterized by 50kV/µs (Typ.) ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of -40°C to +100°C 3A peak output current for medium power MOSFET/IGBT Fast switching speed – 210ns max.
PAGE 2
LED VDD – VSS “Positive Going” (Turn-on) VDD – VSS “Negative Going” (Turn-off) VO Off 0V to 30V 0V to 30V Low On 0V to 11.5V 0V to 10V Low On 11.5V to 13.5V 10V to 12V Transition On 13.
PAGE 3
As per DIN EN/IEC 60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classiﬁcations per DIN VDE 0110/1.
PAGE 4
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
PAGE 5
Symbol Parameter IOH High Level Output Current IOL Low Level Output Current Test Conditions Min. VOH = (VDD – VSS – 1V) Typ. Max. Unit -0.9 -0.5 A VOH = (VDD – VSS – 6V) Output Voltage(4)(5) VOH High Level VOL Low Level Output Voltage(4)(5) -2.5 VOL = (VDD – VSS + 1V) 0.5 VOL = (VDD – VSS + 6V) 2.5 1 A IO = -100mA, IF = 10mA VDD – 0.5 IO = -2.5A, IF = 10mA V VDD – 7 IO = 100mA , IF = 0mA VSS + 0.5 IO = 2.
PAGE 6
Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25°C, unless otherwise specified. Symbol Parameter Test Conditions Min.
PAGE 7
5. 6. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. 7. PWD is defined as | tPHL – tPLH | for any given device.
PAGE 8
Fig. 2 Output High Voltage Drop vs. Ambient Temperature 0.5 (VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V) (VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V) Fig. 1 Output High Voltage Drop vs. Output High Current Frequency = 200Hz Duty Cycle = 0.1% IF = 10mA to 16mA VDD = 15V to 30V VSS = 0V 0 -0.5 -1.0 TA = -40°C -1.5 TA = 25°C -2.0 TA =100°C -2.5 -3.-0 -3.5 0 0.5 1.0 1.5 2.0 2.5 0.00 -0.05 VDD = 15V to 30V VSS = 0V IF = 10mA to 16mA IO = -100mA -0.10 -0.15 -0.20 -0.25 -0.30 -40 -20 Fig.
PAGE 9
Fig. 7 Output Low Current vs. Ambient Temperature Fig. 8 Output Low Current vs. Ambient Temperature 8 Frequency = 200Hz Duty Cycle = 99.8% VF = 0.8V VDD = 15V to 30V IOL – OUTPUT LOW CURRENT (A) IOL – OUTPUT LOW CURRENT (A) 8 6 VO = 6V 4 VO = 3V 2 0 -40 -20 0 20 40 60 80 Frequency = 100Hz Duty Cycle = 99.5% VF = 0.8V VDD = 15V to 30V 6 VO = 6V 4 VO = 3V 2 0 -40 100 TA – AMBIENT TEMPERATURE (°C) 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) Fig. 10 Supply Current vs.
PAGE 10
Fig. 13 Propagation Delay vs. LED Forward Current Fig. 14 Propagation Delay vs. Ambient Temperature 450 VDD = 15V to 30V TA = 25°C RG = 10Ω CG = 10nF Duty Cycle = 50% Frequency = 250kHz 200 tP – PROPAGATION DELAY (ns) tP – PROPAGATION DELAY (ns) 250 150 tPHL tPLH 100 IF = 10mA to 16mA VDD = 15V to 30V RG = 10Ω CG = 10nF Duty Cycle = 50% Frequency = 250kHz 350 250 tPHL 150 tPLH 50 6 8 10 12 14 50 -40 18 IF – FORWARD LED CURRENT (mA) 20 40 60 80 100 Fig. 16 Propagation Delay vs.
PAGE 11
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Typical Performance Curves (Continued) Fig. 19 Under Voltage Lockout 20 VO – OUTPUT VOLTAGE (V) 18 16 14 (13.00V) 12 10 8 6 4 2 (11.40V) 0 0 5 10 15 20 (VDD – VSS) – SUPPLY VOLTAGE (V) ©2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.
PAGE 12
Power Supply + + C1 0.1µF VDD = 15V to 30V C2 47µF Pulse Generator PW = 4.99ms Period = 5ms ROUT = 50Ω 1 8 2 7 3 6 Pulse-In Iol R2 100Ω D1 VOL LED-IFmon 4 Power Supply + + C3 0.1µF V = 6V C4 47µF 5 R1 100Ω To Scope Test Conditions: Frequency = 200Hz Duty Cycle = 99.8% VDD = 15V to 30V VSS = 0V VF(OFF) = -3.0V to 0.8V Figure 20. IOL Test Circuit Power Supply + + C1 0.1µF VDD = 15V to 30V C2 47µF Pulse Generator PW = 10µs Period = 5ms ROUT = 50Ω 1 8 2 7 Pulse-In + + C3 0.
PAGE 13
1 8 2 7 0.1µF + – IF = 10 to 16mA VO 6 3 VDD = 15 to 30V 100mA 4 5 Figure 22. VOH Test Circuit 1 8 2 7 100mA + – 0.1µF 3 6 4 5 VDD = 15 to 30V VO Figure 23. VOL Test Circuit ©2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.
PAGE 14
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Test Circuit (Continued) 1 8 2 7 0.1µF IF = 10 to 16mA 3 6 4 5 + – VDD = 30V + – VDD = 30V VO Figure 24. IDDH Test Circuit + – 1 8 2 7 0.1µF VF = -3.0 to 0.8V 3 6 4 5 VO Figure 25. IDDL Test Circuit ©2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.
PAGE 15
IF 1 8 2 7 3 6 4 5 0.1µF + – VDD = 15 to 30V + – VDD = 15 to 30V VO > 5V Figure 26. IFLH Test Circuit + – 1 8 2 7 0.1µF VF = –3.0 to 0.8V 3 6 4 5 VO Figure 27. VFHL Test Circuit 1 8 2 7 0.1µF + – IF = 10mA 3 6 4 5 VO = 5V 15V or 30V VDD Ramp Figure 28. UVLO Test Circuit ©2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.
PAGE 16
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Test Circuit (Continued) 1 8 2 7 0.1µF + – Probe F = 250kHz DC = 50% 3 6 4 5 VO + – VDD = 15 to 30V Rg = 10Ω Cg = 10nF 50Ω IF tr tf 90% 50% VOUT 10% tPLH tPHL Figure 29. tPHL, tPLH, tr and tf Test Circuit and Waveforms IF 1 8 2 7 A 0.1µF + – B 5V + – 3 6 4 5 VDD = 30V VO +– VCM = 2,000V VCM 0V ∆t VO VOH Switch at A: IF = 10mA VO VOL Switch at B: IF = 0mA Figure 30.
PAGE 17
Through Hole 0.4" Lead Spacing (Option T) 9.40–9.91 9.40–9.91 Pin 1 Pin 1 6.35–6.86 6.35–6.86 1.14–1.78 3.68–3.94 5.08 MAX 3.68–3.94 1.14–1.78 3.05–3.90 0.51 MIN 0.41–0.56 (0.78) 2.54 BSC 5.08 MAX 0.20–0.40 7.62 TYP 0.51 MIN 0.41–0.56 2.54 BSC 3.05–3.90 15.0° MAX 10.16 TYP (0.78) 0.20–0.40 Surface Mount – 0.3" Lead Spacing (Option S) (2.54) (1.78) 9.40–9.91 Pin 1 (1.54) (7.49) 6.35–6.86 (10.54) (0.76) Recommended Land Pattern (Option S) 3.68–3.94 1.14–1.78 5.08 MAX 0.20–0.
PAGE 18
Surface Mount – 0.4" Lead Spacing (Option TS) 9.40–9.91 (2.54) 1.50 (1.78) (1.54) ø1.00 TYP (9.96) 6.35–6.86 (13.00) (0.76) Recommended Land Pattern (Option S) 3.68–3.94 1.14–1.78 7.62 TYP 5.08 MAX 0.20–0.40 (0.78) 0.51 MIN 2.54 TYP 0.40 MIN Both sides 10.16 12.60 MAX Note: 1. All dimensions are in millimeters. 2. Dimensions are exclusive of burrs, mold fash, and tie bar extrusion. Package drawings are provided as a service to customers considering Fairchild components.
PAGE 19
Part Number Package Packing Method FOD3184 DIP 8-Pin Tube (50 units per tube) FOD3184S SMT 8-Pin (Lead Bend) Tube (50 units per tube) FOD3184SD SMT 8-Pin (Lead Bend) Tape and Reel (1,000 units per reel) FOD3184V DIP 8-Pin, DIN EN/IEC 60747-5-2 option Tube (50 units per tube) FOD3184SV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tube (50 units per tube) FOD3184SDV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tape and Reel (1,000 units per reel) FOD3184TV DIP 8-Pin, 0.
PAGE 20
D0 P0 t K0 P2 E F A0 W1 d t P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 16.0 ± 0.3 Tape Thickness 0.30 ± 0.05 P0 Sprocket Hole Pitch 4.0 ± 0.1 D0 Sprocket Hole Diameter 1.55 ± 0.05 E Sprocket Hole Location 1.75 ± 0.10 F Pocket Location 7.5 ± 0.1 2.0 ± 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 12.0 ± 0.1 10.30 ±0.20 B0 10.30 ±0.20 K0 4.90 ±0.20 W1 d R ©2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.
PAGE 21
D0 P0 t K0 P2 E F A0 W1 d P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 24.0 ± 0.3 Tape Thickness 0.40 ± 0.1 P0 Sprocket Hole Pitch 4.0 ± 0.1 D0 Sprocket Hole Diameter 1.55 ± 0.05 E Sprocket Hole Location 1.75 ± 0.10 F Pocket Location 11.5 ± 0.1 t 2.0 ± 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 16.0 ± 0.1 12.80 ± 0.1 B0 10.35 ± 0.1 K0 5.7 ±0.1 W1 d R ©2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.
PAGE 22
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max.
PAGE 23
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